Bipolar effects in unipolar junctionless transistors

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dc.contributor.author Parihar, Mukta Singh
dc.contributor.author Ghosh, Dipankar
dc.contributor.author Armstrong, G. Alastair
dc.contributor.author Yu, Ran
dc.contributor.author Razavi, Pedram
dc.contributor.author Kranti, Abhinav
dc.date.accessioned 2017-07-28T09:23:24Z
dc.date.available 2017-07-28T09:23:24Z
dc.date.issued 2012
dc.identifier.citation Parihar, M. S., Ghosh, D., Armstrong, G. A., Yu, R., Razavi, P. and Kranti, A. (2012) 'Bipolar effects in unipolar junctionless transistors', Applied Physics Letters, 101(9), pp. 093507. doi: 10.1063/1.4748909 en
dc.identifier.volume 101
dc.identifier.issued 9
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4296
dc.identifier.doi 10.1063/1.4748909
dc.description.abstract In this work, we analyze hysteresis and bipolar effects in unipolar junctionless transistors. A change in subthreshold drain current by 5 orders of magnitude is demonstrated at a drain voltage of 2.25 V in silicon junctionless transistor. Contrary to the conventional theory, increasing gate oxide thickness results in (i) a reduction of subthreshold slope (S-slope) and (ii) an increase in drain current, due to bipolar effects. The high sensitivity to film thickness in junctionless devices will be most crucial factor in achieving steep transition from ON to OFF state. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4748909) en
dc.description.sponsorship Government of India (Science and Engineering Research Council, Department of Science and Technology (SR/S3/EECS/0130/2011)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4748909
dc.rights © 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Parihar, M. S., Ghosh, D., Armstrong, G. A., Yu, R., Razavi, P. and Kranti, A. (2012) 'Bipolar effects in unipolar junctionless transistors', Applied Physics Letters, 101(9), pp. 093507 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4748909 en
dc.subject Soi transistors en
dc.subject Silicon en
dc.subject Mosfets en
dc.subject Ionization en
dc.subject MOSFETs en
dc.subject Electrons en
dc.subject Carrier generation en
dc.subject Silicon en
dc.title Bipolar effects in unipolar junctionless transistors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Pedram Razavi, Tyndall National Institute, University College Cork, Cork, Ireland 353 (0)21 2346675, Email: pedram.razavi@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000308408100080
dc.contributor.funder Government of India
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress pedram.razavi@tyndall.ie en
dc.identifier.articleid 93507


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