The zero temperature coefficient in junctionless nanowire transistors

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dc.contributor.author Trevisoli, Renan D.
dc.contributor.author Doria, Rodrigo T.
dc.contributor.author de Souza, Michelly
dc.contributor.author Das, Samaresh
dc.contributor.author Ferain, Isabelle
dc.contributor.author Pavanello, Marcelo Antonio
dc.date.accessioned 2017-07-28T09:23:25Z
dc.date.available 2017-07-28T09:23:25Z
dc.date.issued 2012
dc.identifier.citation Trevisoli, R. D., Doria, R. T., Souza, M. d., Das, S., Ferain, I. and Pavanello, M. A. (2012) 'The zero temperature coefficient in junctionless nanowire transistors', Applied Physics Letters, 101(6), pp. 062101. doi: 10.1063/1.4744965 en
dc.identifier.volume 101
dc.identifier.issued 6
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4297
dc.identifier.doi 10.1063/1.4744965
dc.description.abstract This Letter presents an analysis of the zero temperature coefficient (ZTC) bias in junctionless nanowire transistors (JNTs). Unlike in previous works, which had shown that JNT did not present a ZTC point, this work shows that ZTC may occur in JNTs depending mainly on the series resistance of the devices and its dependence on the temperature. Experimental results of drain current, threshold voltage, and series resistance are presented for both long and short channel n and p-type devices. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4744965) en
dc.description.sponsorship FAPESP; CAPES; CNPq en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.4744965
dc.rights © 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Trevisoli, R. D., Doria, R. T., Souza, M. d., Das, S., Ferain, I. and Pavanello, M. A. (2012) 'The zero temperature coefficient in junctionless nanowire transistors', Applied Physics Letters, 101(6), pp. 062101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4748909 en
dc.subject Doping en
dc.subject Ionization en
dc.subject Carrier mobility en
dc.subject Transistors en
dc.subject High temperature instruments en
dc.title The zero temperature coefficient in junctionless nanowire transistors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Samaresh Das, Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000307862400029
dc.contributor.funder Fundação de Amparo à Pesquisa do Estado de São Paulo
dc.contributor.funder Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.contributor.funder Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.identifier.articleid 62101


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