Citation:Gocalinska, A., Manganaro, M. and Pelucchi, E. (2012) 'Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure', Applied Physics Letters, 100(15), pp. 152112. doi: 10.1063/1.3703587
A virtual substrate for high quality InAs epitaxial layer has been attained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53% to 100%. The use of trimethylantimony (or its decomposition products) as a surfactant has been found to crucially enable the control over the defect formation during the relaxation process. Moreover, an investigation of the wafer offcut-dependence of the defect formation and surface morphology has enabled the achievement of a reliably uniform growth on crystals with offcut towards the (111) B direction. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.3703587)
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