Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings

Show simple item record

dc.contributor.author Gambaryan, Karen M.
dc.contributor.author Aroutiounian, Vladimir M.
dc.contributor.author Harutyunyan, V. G.
dc.contributor.author Marquardt, Oliver
dc.contributor.author Soukiassian, P. G.
dc.date.accessioned 2017-07-28T10:48:30Z
dc.date.available 2017-07-28T10:48:30Z
dc.date.issued 2012
dc.identifier.citation Gambaryan, K. M., Aroutiounian, V. M., Harutyunyan, V. G., Marquardt, O. and Soukiassian, P. G. (2012) 'Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings', Applied Physics Letters, 100(3), pp. 033104. en
dc.identifier.volume 100
dc.identifier.issued 3
dc.identifier.startpage 1
dc.identifier.endpage 4
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4307
dc.identifier.doi 10.1063/1.3676437
dc.description.abstract Quaternary InAsSbP quantum dots (QDs) and quantum rings (QRs) are grown on InAs (100) substrates by liquid phase epitaxy. High resolution scanning electron and atomic force microscopes are used for the characterization. The room temperature optoelectronic and magnetoelectric properties of the InAsSbP type-II QDs and QRs are investigated. For the QD-based structures, specific dips on the capacitance-voltage characteristic are revealed and measured, which are qualitatively explained by the holes thermal and tunnel emissions from the QDs. Specific fractures at room temperature are experimentally found in the magnetic field dependence of an electric sheet resistance for the InAsSbP QRs-based sample. (C) 2012 American Institute of Physics. (doi:10.1063/1.3676437) en
dc.description.sponsorship German Academic Exchange Service; Armenian National Science and Education Fund based in New York, USA en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3676437
dc.rights © 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gambaryan, K. M., Aroutiounian, V. M., Harutyunyan, V. G., Marquardt, O. and Soukiassian, P. G. (2012) 'Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings', Applied Physics Letters, 100(3), pp. 033104 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3676437 en
dc.subject Quantum dots en
dc.subject III-V semiconductors en
dc.subject Semiconductor growth en
dc.subject Magnetic fields en
dc.subject Effective mass en
dc.title Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Oliver Marquardt, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: oliver.marquardt@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000299386800042
dc.contributor.funder Deutscher Akademischer Austauschdienst
dc.contributor.funder Armenian National Science and Education Fund
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.identifier.articleid 33104


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement