Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors

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dc.contributor.author Negara, Muhammad A.
dc.contributor.author Veksler, D.
dc.contributor.author Huang, J.
dc.contributor.author Ghibaudo, G.
dc.contributor.author Hurley, Paul K.
dc.contributor.author Bersuker, G.
dc.contributor.author Goel, N.
dc.contributor.author Kirsch, P.
dc.date.accessioned 2017-07-28T10:48:30Z
dc.date.available 2017-07-28T10:48:30Z
dc.date.issued 2011
dc.identifier.citation Negara, M. A., Veksler, D., Huang, J., Ghibaudo, G., Hurley, P. K., Bersuker, G., Goel, N. and Kirsch, P. (2011) 'Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors', Applied Physics Letters, 99(23), pp. 232101. doi: 10.1063/1.3665033 en
dc.identifier.volume 99
dc.identifier.issued 23
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4309
dc.identifier.doi 10.1063/1.3665033
dc.description.abstract We report an In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistor with a peak Hall mobility of 8300 cm(2)/Vs at a carrier density of 2 x 10(12) cm(-2). Comparison of split capacitance-voltage (CV) and Hall Effect measurements for the extracted electron mobility have shown that the split-CV can lead to an overestimation of the channel carrier concentration and a corresponding underestimation of electron mobility. An analysis of the electron density dependence versus gate voltage allows quantifying the inaccuracy of the split-CV technique. Finally, the analysis supported by multi-channel conduction simulations indicates presence of carriers spill over into the top InP barrier layer at high gate voltages. (C) 2011 American Institute of Physics. (doi: 10.1063/1.3665033) en
dc.description.sponsorship Irish Research Council for Science, Engineering and Technology ((IRCSET)-Marie Curie International Mobility Fellowship in Science, Engineering and Technology; Science Foundation Ireland (Grant No. 08/US/I1546.) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3665033
dc.rights © 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Negara, M. A., Veksler, D., Huang, J., Ghibaudo, G., Hurley, P. K., Bersuker, G., Goel, N. and Kirsch, P. (2011) 'Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors', Applied Physics Letters, 99(23), pp. 232101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3665033 en
dc.subject MOSFETS en
dc.subject Carrier mobility en
dc.subject III-V semiconductors en
dc.subject Hall mobility en
dc.subject Carrier density en
dc.subject Electron mobility en
dc.title Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Paul Hurley, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: paul.hurley@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000298006100029
dc.contributor.funder Irish Research Council for Science, Engineering and Technology
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder FP7 People: Marie-Curie Actions
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.identifier.articleid 232101


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