Built-in field reduction in InGaN/GaN quantum dot molecules

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dc.contributor.author Schulz, Stefan
dc.contributor.author O'Reilly, Eoin P.
dc.date.accessioned 2017-07-28T10:48:30Z
dc.date.available 2017-07-28T10:48:30Z
dc.date.issued 2011
dc.identifier.citation Schulz, S. and O’Reilly, E. P. (2011) 'Built-in field reduction in InGaN/GaN quantum dot molecules', Applied Physics Letters, 99(22), pp. 223106. doi: 10.1063/1.3665069 en
dc.identifier.volume 99
dc.identifier.issued 22
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4310
dc.identifier.doi 10.1063/1.3665069
dc.description.abstract We use a tight-binding model to study the electronic structure of InGaN/GaN quantum dot molecules grown along the c-axis. This analysis is carried out as a function of the barrier thickness between the two non-identical dots. Our results show that the built-in field is effectively reduced in systems of coupled nitride quantum dots, leading to an increased spatial overlap of electron and hole wave functions compared to an isolated dot. This finding is in agreement with experimental data reported in the literature and is directly related to the behavior of the built-in potential outside an isolated dot. (C) 2011 American Institute of Physics. (doi:10.1063/1.3665069) en
dc.description.sponsorship Science Foundation Ireland en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3665069
dc.rights © 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Schulz, S. and O’Reilly, E. P. (2011) 'Built-in field reduction in InGaN/GaN quantum dot molecules', Applied Physics Letters, 99(22), pp. 223106 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3665069 en
dc.subject Optical-properties en
dc.subject Semiconductors en
dc.subject Diodes en
dc.subject Gallium compounds en
dc.subject III-V semiconductors en
dc.subject Indium compounds en
dc.subject Semiconductor quantum dots en
dc.subject Tight-binding calculations en
dc.subject Wide band gap semiconductors en
dc.subject Quantum dots en
dc.subject Quantum wells en
dc.subject Electronic structure en
dc.subject Wave functions en
dc.title Built-in field reduction in InGaN/GaN quantum dot molecules en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Stefan Schulz, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-234-6175, Email: stefan.schulz@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000298244500068
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress stefan.schulz@tyndall.ie en
dc.identifier.articleid 223106


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