Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment

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Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment

O'Connor, Éamon; Monaghan, Scott; Cherkaoui, Karim; Povey, Ian M.; Hurley, Paul K.
Date: 2011
Copyright: © 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Connor, É., Monaghan, S., Cherkaoui, K., Povey, I. M. and Hurley, P. K. (2011) 'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment', Applied Physics Letters, 99(21), pp. 212901 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3663535
Related: http://aip.scitation.org/doi/abs/10.1063/1.3663535
Citation: O’Connor, É., Monaghan, S., Cherkaoui, K., Povey, I. M. and Hurley, P. K. (2011) 'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment', Applied Physics Letters, 99(21), pp. 212901. doi: 10.1063/1.3663535
Published Version: 10.1063/1.3663535

Abstract:

The electrical properties of metal-oxide-semiconductor capacitors incorporating atomic layer deposited Al2O3 on n-type and p-type In0.53Ga0.47As were investigated. A clear minority carrier response was observed for both n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As devices following an optimized ammonium sulfide (NH4)(2)S treatment. Capacitance-voltage and conductance-voltage measurements performed at varying temperatures allowed an Arrhenius extraction of activation energies for the minority carrier response, indicating a transition from a generation-recombination regime to a diffusion controlled response. (C) 2011 American Institute of Physics. (doi:10.1063/1.3663535)

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