Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment

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dc.contributor.author O'Connor, Éamon
dc.contributor.author Monaghan, Scott
dc.contributor.author Cherkaoui, Karim
dc.contributor.author Povey, Ian M.
dc.contributor.author Hurley, Paul K.
dc.date.accessioned 2017-07-28T10:48:30Z
dc.date.available 2017-07-28T10:48:30Z
dc.date.issued 2011
dc.identifier.citation O’Connor, É., Monaghan, S., Cherkaoui, K., Povey, I. M. and Hurley, P. K. (2011) 'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment', Applied Physics Letters, 99(21), pp. 212901. doi: 10.1063/1.3663535 en
dc.identifier.volume 99
dc.identifier.issued 21
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4311
dc.identifier.doi 10.1063/1.3663535
dc.description.abstract The electrical properties of metal-oxide-semiconductor capacitors incorporating atomic layer deposited Al2O3 on n-type and p-type In0.53Ga0.47As were investigated. A clear minority carrier response was observed for both n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As devices following an optimized ammonium sulfide (NH4)(2)S treatment. Capacitance-voltage and conductance-voltage measurements performed at varying temperatures allowed an Arrhenius extraction of activation energies for the minority carrier response, indicating a transition from a generation-recombination regime to a diffusion controlled response. (C) 2011 American Institute of Physics. (doi:10.1063/1.3663535) en
dc.description.sponsorship Science Foundation Ireland (SFI/09/IN.1/I2633) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3663535
dc.rights © 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Connor, É., Monaghan, S., Cherkaoui, K., Povey, I. M. and Hurley, P. K. (2011) 'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment', Applied Physics Letters, 99(21), pp. 212901 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3663535 en
dc.subject Alumina en
dc.subject Atomic layer deposition en
dc.subject Capacitance en
dc.subject Diffusion en
dc.subject Electrical conductivity en
dc.subject Gallium arsenide en
dc.subject Gold en
dc.subject III-V semiconductors en
dc.subject Indium compounds en
dc.subject Minority carriers en
dc.subject MOS capacitors en
dc.subject Nickel en
dc.subject Ozone en
dc.title Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Eamon O' Connor, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: eamon.oconnor@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000297471000031
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress eamon.oconnor@tyndall.ie en
dc.identifier.articleid 212901


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