Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures

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dc.contributor.author O'Regan, Terrance P.
dc.contributor.author Hurley, Paul K.
dc.date.accessioned 2017-07-28T10:48:31Z
dc.date.available 2017-07-28T10:48:31Z
dc.date.issued 2011
dc.identifier.citation O’Regan, T. P. and Hurley, P. K. (2011) 'Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures', Applied Physics Letters, 99(16), pp. 163502. doi: 10.1063/1.3652699 en
dc.identifier.volume 99
dc.identifier.issued 16
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4313
dc.identifier.doi 10.1063/1.3652699
dc.description.abstract The capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor capacitors (MOSCAPs) is calculated in three cases. First, quantization is not considered, then quantization of the C-valley is included, and finally quantization of the Gamma-, X-, and L-valleys is included. The choice of valley energy-minima is shown to determine the onset of occupation of the satellite valleys and corresponding increase in total capacitance. An equivalent-oxide-thickness correction is defined and used as a figure-of-merit to compare III-V to Si MOSCAPs and as a metric for the density-of-states bottleneck. (C) 2011 American Institute of Physics. (doi:10.1063/1.3652699) en
dc.description.sponsorship Science Foundation Ireland (U.S.-Ireland Research Project (08/US/I1546) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3652699
dc.rights © 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Regan, T. P. and Hurley, P. K. (2011) 'Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures', Applied Physics Letters, 99(16), pp. 163502 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3652699 en
dc.subject Transport en
dc.subject Silicon en
dc.subject Mosfets en
dc.subject III-V semiconductors en
dc.subject Capacitance en
dc.subject Metal insulator semiconductor structures en
dc.subject Interfacial properties en
dc.subject Dielectrics en
dc.title Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Paul Hurley, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: paul.hurley@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000296517600078
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Army Research Laboratory
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.identifier.articleid 163502


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