The curious case of thin-body Ge crystallization
Duffy, R.; Shayesteh, M.; McCarthy, B.; Blake, A.; White, M.; Scully, J.; Yu, R.; Kelleher, A. -M.; Schmidt, M.; Petkov, N.; Pelaz, L.; Marques, L. A.
Date:
2011
Copyright:
© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Duffy, R., Shayesteh, M., McCarthy, B., Blake, A., White, M., Scully, J., Yu, R., Kelleher, A.-M., Schmidt, M., Petkov, N., Pelaz, L. and Marqués, L. A. (2011) 'The curious case of thin-body Ge crystallization', Applied Physics Letters, 99(13), pp. 131910 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3643160
Citation:
Duffy, R., Shayesteh, M., McCarthy, B., Blake, A., White, M., Scully, J., Yu, R., Kelleher, A.-M., Schmidt, M., Petkov, N., Pelaz, L. and Marqués, L. A. (2011) 'The curious case of thin-body Ge crystallization', Applied Physics Letters, 99(13), pp. 131910.
Abstract:
The authors investigate the templated crystallization of thin-body Ge fin structures with high aspect ratios. Experimental variables include fin thickness and thermal treatments, with fin structures oriented in the < 110 > direction. Transmission electron microscopy determined that various crystal defects form during crystallization of amorphous Ge regions, most notably (111) stacking faults, twin boundaries, and small crystallites. In all cases, the nature of the defects is dependent on the fin thickness and thermal treatments applied. Using a standard 600 degrees C rapid-thermal-anneal, Ge structures with high aspect ratios crystallize with better crystal quality and fewer uncured defects than the equivalent Si case, which is a cause for optimism for thin-film Ge devices. (C) 2011 American Institute of Physics. (doi:10.1063/1.3643160)
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