Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements

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dc.contributor.author Nazarov, Alexei N.
dc.contributor.author Ferain, Isabelle
dc.contributor.author Akhavan, Nima Dehdashti
dc.contributor.author Razavi, Pedram
dc.contributor.author Yu, Ran
dc.contributor.author Colinge, Jean-Pierre
dc.date.accessioned 2017-07-28T10:48:31Z
dc.date.available 2017-07-28T10:48:31Z
dc.date.issued 2011
dc.identifier.citation Nazarov, A. N., Ferain, I., Akhavan, N. D., Razavi, P., Yu, R. and Colinge, J. P. (2011) 'Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements', Applied Physics Letters, 99(7), pp. 073502. doi: 10.1063/1.3626038 en
dc.identifier.volume 99
dc.identifier.issued 7
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4315
dc.identifier.doi 10.1063/1.3626038
dc.description.abstract A technique based on the combined measurements of random telegraph-signal noise amplitude and drain current vs. gate voltage characteristics is proposed to extract the channel mobility in inversion-mode and accumulation-mode nanowire transistors. This method does not require the preliminary knowledge of the gate oxide capacitance or that of the channel width. The method accounts for the presence of parasitic source and drain resistance effect. It has been used to extract the zero-field mobility and the field mobility reduction factor in inversion-mode and junctionless transistors operating in accumulation mode. (C) 2011 American Institute of Physics. (doi:10.1063/1.3626038) en
dc.description.sponsorship Science Foundation Ireland [05/IN/I888, 10/IN.1/12992]; European Community (EC) [216171, 216373] en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3626038
dc.rights © 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Nazarov, A. N., Ferain, I., Akhavan, N. D., Razavi, P., Yu, R. and Colinge, J. P. (2011) 'Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements', Applied Physics Letters, 99(7), pp. 073502 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3626038 en
dc.subject MOSFETs en
dc.subject Nanowires en
dc.subject Carrier mobility en
dc.subject Capacitance en
dc.subject Electric measurements en
dc.title Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Pedram Razavi, Tyndall National Institute, University College Cork, Cork, Ireland +353 (0)21 2346675, Email: pedram.razavi@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000294208900065
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Seventh Framework Programme
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress pedram.razavi@tyndall.ie en
dc.identifier.articleid 73502
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216373/EU/European platform for low-power applications on Silicon-on-Insulator Technology/EUROSOI+


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