Characterization of a junctionless diode

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dc.contributor.author Yu, Ran
dc.contributor.author Ferain, Isabelle
dc.contributor.author Akhavan, Nima Dehdashti
dc.contributor.author Razavi, Pedram
dc.contributor.author Duffy, Ray
dc.contributor.author Colinge, Jean-Pierre
dc.date.accessioned 2017-07-28T11:04:39Z
dc.date.available 2017-07-28T11:04:39Z
dc.date.issued 2011
dc.identifier.citation Yu, R., Ferain, I., Akhavan, N. D., Razavi, P., Duffy, R. and Colinge, J.-P. (2011) 'Characterization of a junctionless diode', Applied Physics Letters, 99(1), pp. 013502. doi: 10.1063/1.3608150 en
dc.identifier.volume 99
dc.identifier.issued 1
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4318
dc.identifier.doi 10.1063/1.3608150
dc.description.abstract A diode has been realised using a silicon junctionless (JL) transistor. The device contains neither PN junction nor Schottky junction. The device is measured at different temperatures. The characteristics of the JL diode are essentially identical to those of a regular PN junction diode. The JL diode has an on/off current ratio of 10(8), an ideality factor of 1.09, and a reverse leakage current of 1 x 10(-14) A at room temperature. The mechanism of the leakage current is discussed using the activation energy (E-A). The turn-on voltage of the device can be tuned by JL transistor threshold voltage. (C) 2011 American Institute of Physics. (doi: 10.1063/1.3608150) en
dc.description.sponsorship Science Foundation Ireland (05/IN/I888, 09/SIRG/I1623, 10/IN.1/I2992) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3608150
dc.rights © 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Yu, R., Ferain, I., Akhavan, N. D., Razavi, P., Duffy, R. and Colinge, J.-P. (2011) 'Characterization of a junctionless diode', Applied Physics Letters, 99(1), pp. 013502 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3608150 en
dc.subject Leakage currents en
dc.subject MOSFETs en
dc.subject P-N junctions en
dc.subject Carrier generation en
dc.subject Diffusion en
dc.title Characterization of a junctionless diode en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Ray Duffy, Tyndall National Institute, University College Cork, Cork, Ireland + 353 21 234 6644, Email: ray.duffy@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000292639200073
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress ray.duffy@tyndall.ie en
dc.identifier.articleid 13502
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257111/EU/Silicon Quantum Wire Transistors/SQWIRE
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257964/EU/ECOSYSTEMS TECHNOLOGY and DESIGN for NANOELECTRONICS/NANO-TEC


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