Characterization of a junctionless diode

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Date
2011
Authors
Yu, Ran
Ferain, Isabelle
Akhavan, Nima Dehdashti
Razavi, Pedram
Duffy, Ray
Colinge, Jean-Pierre
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AIP Publishing
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Abstract
A diode has been realised using a silicon junctionless (JL) transistor. The device contains neither PN junction nor Schottky junction. The device is measured at different temperatures. The characteristics of the JL diode are essentially identical to those of a regular PN junction diode. The JL diode has an on/off current ratio of 10(8), an ideality factor of 1.09, and a reverse leakage current of 1 x 10(-14) A at room temperature. The mechanism of the leakage current is discussed using the activation energy (E-A). The turn-on voltage of the device can be tuned by JL transistor threshold voltage. (C) 2011 American Institute of Physics. (doi: 10.1063/1.3608150)
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Keywords
Leakage currents , MOSFETs , P-N junctions , Carrier generation , Diffusion
Citation
Yu, R., Ferain, I., Akhavan, N. D., Razavi, P., Duffy, R. and Colinge, J.-P. (2011) 'Characterization of a junctionless diode', Applied Physics Letters, 99(1), pp. 013502. doi: 10.1063/1.3608150
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© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Yu, R., Ferain, I., Akhavan, N. D., Razavi, P., Duffy, R. and Colinge, J.-P. (2011) 'Characterization of a junctionless diode', Applied Physics Letters, 99(1), pp. 013502 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3608150