Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding

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dc.contributor.author Charash, Ragh
dc.contributor.author Kim-Chauveau, H.
dc.contributor.author Lamy, Jean Michel.
dc.contributor.author Akhter, Mahbub
dc.contributor.author Maaskant, Pleun P.
dc.contributor.author Frayssinet, E.
dc.contributor.author de Mierry, P.
dc.contributor.author Draeger, A. D.
dc.contributor.author Duboz, J-Y.
dc.contributor.author Hangleiter, A.
dc.contributor.author Corbett, Brian M.
dc.date.accessioned 2017-07-28T11:04:40Z
dc.date.available 2017-07-28T11:04:40Z
dc.date.issued 2011
dc.identifier.citation Charash, R., Kim-Chauveau, H., Lamy, J.-M., Akther, M., Maaskant, P. P., Frayssinet, E., Mierry, P. d., Dräger, A. D., Duboz, J.-Y., Hangleiter, A. and Corbett, B. (2011) 'Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding', Applied Physics Letters, 98(20), pp. 201112. doi: 10.1063/1.3589974 en
dc.identifier.volume 98
dc.identifier.issued 20
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4321
dc.identifier.doi 10.1063/1.3589974
dc.description.abstract Electrically injected, edge-emitting cleaved-facet violet laser diodes were realized using a 480 nm thick lattice matched Si doped Al0.82In0.18N/GaN multilayer as the cladding on the n-side of the waveguide. Far-field measurements verify strong mode confinement to the waveguide. An extra voltage is measured and investigated using separate mesa structures with a single AlInN insertion. This showed that the electron current has a small thermally activated shunt resistance with a barrier of 0.135 eV and a current which scales according to V-n, where n similar to 3 at current densities appropriate to laser operation. (C) 2011 American Institute of Physics. (doi:10.1063/1.3589974) en
dc.description.sponsorship Enterprise Ireland (Contract No. IRF/08/SPOT/14); Agence Nationale de la Recherche (French project ANR MATETPRO); European Regional Development Fund (ERA-SPOT program, Truegreen) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3589974
dc.rights © 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Charash, R., Kim-Chauveau, H., Lamy, J.-M., Akther, M., Maaskant, P. P., Frayssinet, E., Mierry, P. d., Dräger, A. D., Duboz, J.-Y., Hangleiter, A. and Corbett, B. (2011) 'Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding', Applied Physics Letters, 98(20), pp. 201112 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3589974 en
dc.subject Inaln/(in)gan en
dc.subject Electronics en
dc.subject Layers en
dc.subject Aluminium en
dc.subject Cladding en
dc.subject Electrical resistivity en
dc.subject Gold en
dc.subject Laser diodes en
dc.title Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Ragh Charash, Tyndall National Institute, University College Cork, Cork, Ireland +353 (0)21 2346990, Email: ragh.charash@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000290812100012
dc.contributor.funder Enterprise Ireland
dc.contributor.funder Agence Nationale de la Recherche
dc.contributor.funder European Regional Development Fund
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress ragh.charash@tyndall.ie en
dc.identifier.articleid 201112


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