On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors
Sonnet, A. M.; Galatage, R. V.; Hurley, Paul K.; Pelucchi, Emanuele; Thomas, Kevin K.; Gocalińska, Agnieszka M.; Huang, J.; Goel, N.; Bersuker, G.; Kirk, W. P.; Hinkle, C. L.; Wallace, Robert M.; Vogel, E. M.
Date:
2011
Copyright:
© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Sonnet, A. M., Galatage, R. V., Hurley, P. K., Pelucchi, E., Thomas, K. K., Gocalinska, A., Huang, J., Goel, N., Bersuker, G., Kirk, W. P., Hinkle, C. L., Wallace, R. M. and Vogel, E. M. (2011) 'On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors', Applied Physics Letters, 98(19), pp. 193501 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3588255
Citation:
Sonnet, A. M., Galatage, R. V., Hurley, P. K., Pelucchi, E., Thomas, K. K., Gocalinska, A., Huang, J., Goel, N., Bersuker, G., Kirk, W. P., Hinkle, C. L., Wallace, R. M. and Vogel, E. M. (2011) 'On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors', Applied Physics Letters, 98(19), pp. 193501. doi: 10.1063/1.3588255
Abstract:
The effective electron mobility of In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors with HfO2 gate oxide was measured over a wide range of channel doping concentration. The back bias dependence of effective electron mobility was used to correctly calculate the vertical effective electric field. The effective electron mobility at moderate to high vertical effective electric field shows universal behavior independent of substrate impurity concentration. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3588255]
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