On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors

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dc.contributor.author Sonnet, A. M.
dc.contributor.author Galatage, R. V.
dc.contributor.author Hurley, Paul K.
dc.contributor.author Pelucchi, Emanuele
dc.contributor.author Thomas, Kevin K.
dc.contributor.author Gocalińska, Agnieszka M.
dc.contributor.author Huang, J.
dc.contributor.author Goel, N.
dc.contributor.author Bersuker, G.
dc.contributor.author Kirk, W. P.
dc.contributor.author Hinkle, C. L.
dc.contributor.author Wallace, Robert M.
dc.contributor.author Vogel, E. M.
dc.date.accessioned 2017-07-28T11:04:40Z
dc.date.available 2017-07-28T11:04:40Z
dc.date.issued 2011
dc.identifier.citation Sonnet, A. M., Galatage, R. V., Hurley, P. K., Pelucchi, E., Thomas, K. K., Gocalinska, A., Huang, J., Goel, N., Bersuker, G., Kirk, W. P., Hinkle, C. L., Wallace, R. M. and Vogel, E. M. (2011) 'On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors', Applied Physics Letters, 98(19), pp. 193501. doi: 10.1063/1.3588255 en
dc.identifier.volume 98
dc.identifier.issued 19
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4322
dc.identifier.doi 10.1063/1.3588255
dc.description.abstract The effective electron mobility of In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors with HfO2 gate oxide was measured over a wide range of channel doping concentration. The back bias dependence of effective electron mobility was used to correctly calculate the vertical effective electric field. The effective electron mobility at moderate to high vertical effective electric field shows universal behavior independent of substrate impurity concentration. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3588255] en
dc.description.sponsorship Semiconductor Research Corporation (SRC FCRP MARCO Materials Structures and Devices Center; National Science Foundation under ECCS Award No. 0925844); Science Foundation Ireland (Grant Nos. 08/U.S./I1546 and 05/IN.1/I25); Irish Higher Education Authority (Program for Research in Third Level Institutions 2007–2011 via the INSPIRE program) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3588255
dc.rights © 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Sonnet, A. M., Galatage, R. V., Hurley, P. K., Pelucchi, E., Thomas, K. K., Gocalinska, A., Huang, J., Goel, N., Bersuker, G., Kirk, W. P., Hinkle, C. L., Wallace, R. M. and Vogel, E. M. (2011) 'On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors', Applied Physics Letters, 98(19), pp. 193501 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3588255 en
dc.subject Mobility en
dc.subject Inversion en
dc.subject Mosfets en
dc.subject Layers en
dc.subject Model en
dc.subject Doping en
dc.subject Carrier mobility en
dc.subject Electron mobility en
dc.subject Electric fields en
dc.title On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Paul Hurley, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: paul.hurley@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000290586800073
dc.contributor.funder National Science Foundation
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Higher Education Authority
dc.contributor.funder Semiconductor Research Corporation
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.identifier.articleid 193501


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