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| dc.contributor.author | Jang, Doyoung | |
| dc.contributor.author | Lee, Jae Woo | |
| dc.contributor.author | Lee, Chi-Woo | |
| dc.contributor.author | Colinge, Jean-Pierre | |
| dc.contributor.author | Montes, Laurent | |
| dc.contributor.author | Lee, Jung Il | |
| dc.contributor.author | Kim, Gyu Tae | |
| dc.contributor.author | Ghibaudo, G. | |
| dc.date.accessioned | 2017-07-28T11:04:40Z | |
| dc.date.available | 2017-07-28T11:04:40Z | |
| dc.date.issued | 2011 | |
| dc.identifier.citation | Jang, D., Lee, J. W., Lee, C.-W., Colinge, J.-P., Montès, L., Lee, J. I., Kim, G. T. and Ghibaudo, G. (2011) 'Low-frequency noise in junctionless multigate transistors', Applied Physics Letters, 98(13), pp. 133502. doi: 10.1063/1.3569724 | en |
| dc.identifier.volume | 98 | |
| dc.identifier.issued | 13 | |
| dc.identifier.startpage | 1 | |
| dc.identifier.endpage | 3 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.issn | 1077-3118 | |
| dc.identifier.uri | http://hdl.handle.net/10468/4324 | |
| dc.identifier.doi | 10.1063/1.3569724 | |
| dc.description.abstract | Low-frequency noise in n-type junctionless multigate transistors was investigated. It can be well understood with the carrier number fluctuations whereas the conduction is mainly limited by the bulk expecting Hooge mobility fluctuations. The trapping/release of charge carriers is related not only to the oxide-semiconductor interface but also to the depleted channel. The volume trap density is in the range of 6-30 x 10(16) cm(-3) eV(-1), which is similar to Si-SiO2 bulk transistors and remarkably lower than in high-k transistors. These results show that the noise in nanowire devices might be affected by additional trapping centers. (C) 2011 American Institute of Physics. (doi:10.1063/1.3569724) | en |
| dc.description.sponsorship | National Research Foundation of Korea (NRF grant Converging Research Center program, Grant No. 2010K000981, WCU Grant No. R32-2008-000-10082-0, GRL Grant No. M6060500007-06A0500-00710, 2005-2002369); Korea Institute of Science and Technology and Centre National pour la Recherche Scientifique et Technique (CNRS KIST LIA collaboration); Science Foundation Ireland (Grant No. 05/IN/I888) | en |
| dc.format.mimetype | application/pdf | en |
| dc.language.iso | en | en |
| dc.publisher | AIP Publishing | en |
| dc.relation.uri | http://aip.scitation.org/doi/abs/10.1063/1.3569724 | |
| dc.rights | © 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Jang, D., Lee, J. W., Lee, C.-W., Colinge, J.-P., Montès, L., Lee, J. I., Kim, G. T. and Ghibaudo, G. (2011) 'Low-frequency noise in junctionless multigate transistors', Applied Physics Letters, 98(13), pp. 133502 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3569724 | en |
| dc.subject | Field-effect transistors | en |
| dc.subject | Excess noise | en |
| dc.subject | Mos-transistors | en |
| dc.subject | 1/f noise | en |
| dc.subject | Devices | en |
| dc.subject | Model | en |
| dc.subject | Carrier mobility | en |
| dc.subject | MOSFETs | en |
| dc.subject | Nanowires1/f noise | en |
| dc.subject | Oxide surfaces | en |
| dc.title | Low-frequency noise in junctionless multigate transistors | en |
| dc.type | Article (peer-reviewed) | en |
| dc.internal.authorcontactother | Jean-Pierre Colinge, Tyndall National Institute, University College Cork, Cork, Ireland, Email: jpcolinge@yahoo.com | en |
| dc.internal.availability | Full text available | en |
| dc.description.version | Published Version | en |
| dc.internal.wokid | WOS:000289153600091 | |
| dc.contributor.funder | National Research Foundation of Korea
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| dc.contributor.funder | Fondation Nanosciences
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| dc.contributor.funder | Science Foundation Ireland
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| dc.contributor.funder | Seventh Framework Programme
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| dc.contributor.funder | Korea Institute of Science and Technology
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| dc.contributor.funder | Centre National pour la Recherche Scientifique et Technique
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| dc.description.status | Peer reviewed | en |
| dc.identifier.journaltitle | Applied Physics Letters | en |
| dc.internal.IRISemailaddress | jpcolinge@yahoo.com | en |
| dc.identifier.articleid | 133502 | |
| dc.relation.project | info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL
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| dc.relation.project | info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216373/EU/European platform for low-power applications on Silicon-on-Insulator Technology/EUROSOI+
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