Citation:Akhavan, N. D., Ferain, I., Razavi, P., Yu, R. and Colinge, J.-P. (2011) 'Improvement of carrier ballisticity in junctionless nanowire transistors', Applied Physics Letters, 98(10), pp. 103510. doi: 10.1063/1.3559625
In this work we show that junctionless nanowire transistor (JNT) exhibits lower degree of ballisticity in subthreshold and higher ballisticity above threshold compare to conventional inversion-mode transistors, according to quantum mechanical simulations. The lower degradation of the ballisticity above threshold region gives the JNT near-ballistic transport performance and hence a high current drive. On the other hand, lower ballisticity in subthreshold region helps reducing the off-current and improves the subthreshold slope. A three-dimensional quantum mechanical device simulator based on the nonequilibrium Green's function formalism in the uncoupled mode-space approach has been developed to extract the physical parameters of the devices. (C) 2011 American Institute of Physics. (doi:10.1063/1.3559625)
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