Improvement of carrier ballisticity in junctionless nanowire transistors
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Date
2011
Authors
Akhavan, Nima Dehdashti
Ferain, Isabelle
Razavi, Pedram
Yu, Ran
Colinge, Jean-Pierre
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
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Abstract
In this work we show that junctionless nanowire transistor (JNT) exhibits lower degree of ballisticity in subthreshold and higher ballisticity above threshold compare to conventional inversion-mode transistors, according to quantum mechanical simulations. The lower degradation of the ballisticity above threshold region gives the JNT near-ballistic transport performance and hence a high current drive. On the other hand, lower ballisticity in subthreshold region helps reducing the off-current and improves the subthreshold slope. A three-dimensional quantum mechanical device simulator based on the nonequilibrium Green's function formalism in the uncoupled mode-space approach has been developed to extract the physical parameters of the devices. (C) 2011 American Institute of Physics. (doi:10.1063/1.3559625)
Description
Keywords
Quantum transport , Simulation , Nm , Transistors , Nanowires , Phonons , MOSFETs , Doping
Citation
Akhavan, N. D., Ferain, I., Razavi, P., Yu, R. and Colinge, J.-P. (2011) 'Improvement of carrier ballisticity in junctionless nanowire transistors', Applied Physics Letters, 98(10), pp. 103510. doi: 10.1063/1.3559625
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Copyright
© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Akhavan, N. D., Ferain, I., Razavi, P., Yu, R. and Colinge, J.-P. (2011) 'Improvement of carrier ballisticity in junctionless nanowire transistors', Applied Physics Letters, 98(10), pp. 103510 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3559625