Improvement of carrier ballisticity in junctionless nanowire transistors

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dc.contributor.author Akhavan, Nima Dehdashti
dc.contributor.author Ferain, Isabelle
dc.contributor.author Razavi, Pedram
dc.contributor.author Yu, Ran
dc.contributor.author Colinge, Jean-Pierre
dc.date.accessioned 2017-07-28T11:04:40Z
dc.date.available 2017-07-28T11:04:40Z
dc.date.issued 2011
dc.identifier.citation Akhavan, N. D., Ferain, I., Razavi, P., Yu, R. and Colinge, J.-P. (2011) 'Improvement of carrier ballisticity in junctionless nanowire transistors', Applied Physics Letters, 98(10), pp. 103510. doi: 10.1063/1.3559625 en
dc.identifier.volume 98
dc.identifier.issued 10
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4325
dc.identifier.doi 10.1063/1.3559625
dc.description.abstract In this work we show that junctionless nanowire transistor (JNT) exhibits lower degree of ballisticity in subthreshold and higher ballisticity above threshold compare to conventional inversion-mode transistors, according to quantum mechanical simulations. The lower degradation of the ballisticity above threshold region gives the JNT near-ballistic transport performance and hence a high current drive. On the other hand, lower ballisticity in subthreshold region helps reducing the off-current and improves the subthreshold slope. A three-dimensional quantum mechanical device simulator based on the nonequilibrium Green's function formalism in the uncoupled mode-space approach has been developed to extract the physical parameters of the devices. (C) 2011 American Institute of Physics. (doi:10.1063/1.3559625) en
dc.description.sponsorship Science Foundation Ireland [05/IN/I888]; European Community (EC) through the Networks of Excellence (216171, 216373) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3559625
dc.rights © 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Akhavan, N. D., Ferain, I., Razavi, P., Yu, R. and Colinge, J.-P. (2011) 'Improvement of carrier ballisticity in junctionless nanowire transistors', Applied Physics Letters, 98(10), pp. 103510 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3559625 en
dc.subject Quantum transport en
dc.subject Simulation en
dc.subject Nm en
dc.subject Transistors en
dc.subject Nanowires en
dc.subject Phonons en
dc.subject MOSFETs en
dc.subject Doping en
dc.title Improvement of carrier ballisticity in junctionless nanowire transistors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Pedram Razavi, Tyndall National Institute, University College Cork, Cork, Ireland +353 (0)21 2346675, Email: pedram.razavi@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000288277200081
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Seventh Framework Programme en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress pedram.razavi@tyndall.ie en
dc.identifier.articleid 103510
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216373/EU/European platform for low-power applications on Silicon-on-Insulator Technology/EUROSOI+


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