Low-temperature conductance oscillations in junctionless nanowire transistors

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dc.contributor.author Park, Jong-Tae
dc.contributor.author Kim, Jin Young
dc.contributor.author Lee, Chi-Woo
dc.contributor.author Colinge, Jean-Pierre
dc.date.accessioned 2017-07-28T11:04:41Z
dc.date.available 2017-07-28T11:04:41Z
dc.date.issued 2010
dc.identifier.citation Park, J.-T., Kim, J. Y., Lee, C.-W. and Colinge, J.-P. (2010) 'Low-temperature conductance oscillations in junctionless nanowire transistors', Applied Physics Letters, 97(17), pp. 172101. doi: 10.1063/1.3506899 en
dc.identifier.volume 97
dc.identifier.issued 17
dc.identifier.startpage 1
dc.identifier.endpage 2
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4329
dc.identifier.doi 10.1063/1.3506899
dc.description.abstract Junctionless nanowire transistors show more marked oscillations conductance oscillations than inversion-mode devices. These oscillations can be observed at higher temperature, drain voltage, and gate voltage than in surface-channel, inversion-mode multigate metal-oxide-semiconductor field-effect devices. Clear oscillations are observed at 77 K at a drain voltage of 100 mV in devices with a 10 x 10 nm(2) cross section. (C) 2010 American Institute of Physics. (doi:10.1063/1.3506899) en
dc.description.sponsorship Science Foundation Ireland (Grant No. 05/IN/I888: Advanced Scalable Silicon-on-Insulator Devices for Beyond-End-of-Roadmap Semiconductors.); Higher Education Authority (Programme for Research in Third-Level Institutions); University of Incheon (University of Incheon International Cooperative Research Grant 2010) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3506899
dc.rights © 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Park, J.-T., Kim, J. Y., Lee, C.-W. and Colinge, J.-P. (2010) 'Low-temperature conductance oscillations in junctionless nanowire transistors', Applied Physics Letters, 97(17), pp. 172101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3506899 en
dc.subject Nanowires en
dc.subject MOSFETs en
dc.subject Doping en
dc.subject Metal insulator semiconductor structures en
dc.subject Temperature measurement en
dc.title Low-temperature conductance oscillations in junctionless nanowire transistors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Jean-Pierre Colinge, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000, Email: jean-pierre.colinge@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000284233600022
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Incheon National University
dc.contributor.funder Higher Education Authority
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress jean-pierre.colinge@tyndall.ie en
dc.identifier.articleid 172101


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