Electron band alignment between (100)InP and atomic-layer deposited Al2O3
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Date
2010
Authors
Chou, Hsing-Yi
Afanas'ev, V. V.
Stesmans, A.
Lin, H. C.
Hurley, Paul K.
Newcomb, Simon B.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
Energy barriers at interfaces of (100)InP with atomic-layer deposited Al2O3 are determined using internal photoemission of electrons. The barrier height between the top of the InP valence band and bottom of the alumina conduction band is found to be 4.05 +/- 0.10 eV corresponding to a conduction band offset of 2.7 eV. An interlayer associated with the oxidation of InP may result in a lower barrier for electron injection potentially leading to charge instability of the insulating stack. A wide-gap P-rich interlayer has a potential to reduce this degrading effect as compared to In-rich oxides. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3496039)
Description
Keywords
Oxides , Inp , Ozone , III-V semiconductors , Gold , Atomic layer deposition , Electric fields
Citation
Chou, H.-Y., Afanas’ev, V. V., Stesmans, A., Lin, H. C., Hurley, P. K. and Newcomb, S. B. (2010) 'Electron band alignment between (100)InP and atomic-layer deposited Al2O3', Applied Physics Letters, 97(13), pp. 132112. doi: 10.1063/1.3496039
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Copyright
© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Chou, H.-Y., Afanas’ev, V. V., Stesmans, A., Lin, H. C., Hurley, P. K. and Newcomb, S. B. (2010) 'Electron band alignment between (100)InP and atomic-layer deposited Al2O3', Applied Physics Letters, 97(13), pp. 132112 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3496039