Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy

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Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy

Dimastrodonato, Valeria; Mereni, Lorenzo O.; Juska, Gediminas; Pelucchi, Emanuele
Date: 2010
Copyright: © 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Dimastrodonato, V., Mereni, L. O., Juska, G. and Pelucchi, E. (2010) 'Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy', Applied Physics Letters, 97(7), pp. 072115 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3481675
Related: http://aip.scitation.org/doi/abs/10.1063/1.3481675
Citation: Dimastrodonato, V., Mereni, L. O., Juska, G. and Pelucchi, E. (2010) 'Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy', Applied Physics Letters, 97(7), pp. 072115. doi: 10.1063/1.3481675
Published Version: 10.1063/1.3481675

Abstract:

We report on some surprising optical properties of diluted nitride InGaAs(1-epsilon)N(epsilon)/GaAs (epsilon << 1) pyramidal site-controlled quantum dots, grown by metalorganic vapor phase epitaxy on patterned GaAs (111)B substrates. Microphotoluminescence characterizations showed antibinding exciton/biexciton behavior, a spread of exciton lifetimes in an otherwise very uniform sample, with unexpected long neutral exciton lifetimes (up to 7 ns) and a nearly zero fine structure splitting on a majority of dots. (C) 2010 American Institute of Physics. (doi:10.1063/1.3481675)

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