Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

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Date
2010
Authors
O'Mahony, Aileen
Monaghan, Scott
Provenzano, G.
Povey, Ian M.
Nolan, M. G.
O'Connor, Éamon
Cherkaoui, Karim
Newcomb, Simon B.
Crupi, Felice
Hurley, Paul K.
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AIP Publishing
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Abstract
High mobility III-V substrates with high-k oxides are required for device scaling without loss of channel mobility. Interest has focused on the self-cleaning effect on selected III-V substrates during atomic layer deposition of Al2O3. A thin (similar to 1 nm) Al2O3 interface control layer is deposited on In0.53Ga0.47As prior to HfO2 growth, providing the benefit of self-cleaning and improving the interface quality by reducing interface state defect densities by similar to 50% while maintaining scaling trends. Significant reductions in leakage current density and increased breakdown voltage are found, indicative of a band structure improvement due to the reduction/removal of the In0.53Ga0.47As native oxides. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3473773)
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Keywords
Silicon , HfO2 , Ozone , Atomic layer deposition , Interface structure , III-V semiconductors , Leakage currents
Citation
O’Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O’Connor, É., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K. and Pemble, M. E. (2010) 'Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer', Applied Physics Letters, 97(5), pp. 052904. doi: 10.1063/1.3473773
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© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O’Connor, É., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K. and Pemble, M. E. (2010) 'Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer', Applied Physics Letters, 97(5), pp. 052904 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3473773