The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization

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dc.contributor.author Duffy, Ray
dc.contributor.author Shayesteh, Maryam
dc.contributor.author White, Mary
dc.contributor.author Kearney, John
dc.contributor.author Kelleher, Anne-Marie
dc.date.accessioned 2017-07-28T11:22:08Z
dc.date.available 2017-07-28T11:22:08Z
dc.date.issued 2010
dc.identifier.citation Duffy, R., Shayesteh, M., White, M., Kearney, J. and Kelleher, A.-M. (2010) 'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization', Applied Physics Letters, 96(23), pp. 231909. doi: 10.1063/1.3452345 en
dc.identifier.volume 96
dc.identifier.issued 23
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4340
dc.identifier.doi 10.1063/1.3452345
dc.description.abstract Design and optimization of n-type doped regions in germanium by solid phase epitaxial recrystallization (SPER) have been studied by the authors. A systematic study is presented of process variables that influence activation and thermal stability, including preamorphization, coimplants, recrystallization temperature, and postrecrystallization thermal treatments. Unlike silicon, activation after recrystallization in germanium is not optimum where the postrecrystallization thermal budget is kept to a minimum. With the aid of modeling, a maximum peak activation of 7 X 10(19) cm(-3) was extracted. A steady increase in sheet resistance during postrecrystallization anneals confirms the formation of metastable activation by SPER. It is predicted that active concentrations of 6-8 X 10(19) cm(-3) are sufficient to meet targets for sub-20 nm technologies. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3452345) en
dc.description.sponsorship Science Foundation Ireland (Research Grant No. 09/SIRG/I1623) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3452345
dc.rights © 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Duffy, R., Shayesteh, M., White, M., Kearney, J. and Kelleher, A.-M. (2010) 'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization', Applied Physics Letters, 96(23), pp. 231909 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3452345 en
dc.subject Ultrashallow junctions en
dc.subject Shallow junction en
dc.subject Implantation en
dc.subject Diffusion en
dc.subject Deactivation en
dc.subject Phosphorus en
dc.subject Activation en
dc.subject Mechanism en
dc.subject Defects en
dc.subject Silicon en
dc.subject Germanium en
dc.subject Elemental semiconductors en
dc.subject Annealing en
dc.subject Doping en
dc.subject Recrystallization en
dc.title The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Ray Duffy, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000, Email: ray.duffy@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000278695900028
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress ray.duffy@tyndall.ie en
dc.identifier.articleid 231909


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