The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization

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Date
2010
Authors
Duffy, Ray
Shayesteh, Maryam
White, Mary
Kearney, John
Kelleher, Anne-Marie
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AIP Publishing
Published Version
10.1063/1.3452345
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Abstract
Design and optimization of n-type doped regions in germanium by solid phase epitaxial recrystallization (SPER) have been studied by the authors. A systematic study is presented of process variables that influence activation and thermal stability, including preamorphization, coimplants, recrystallization temperature, and postrecrystallization thermal treatments. Unlike silicon, activation after recrystallization in germanium is not optimum where the postrecrystallization thermal budget is kept to a minimum. With the aid of modeling, a maximum peak activation of 7 X 10(19) cm(-3) was extracted. A steady increase in sheet resistance during postrecrystallization anneals confirms the formation of metastable activation by SPER. It is predicted that active concentrations of 6-8 X 10(19) cm(-3) are sufficient to meet targets for sub-20 nm technologies. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3452345)
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Keywords
Ultrashallow junctions , Shallow junction , Implantation , Diffusion , Deactivation , Phosphorus , Activation , Mechanism , Defects , Silicon , Germanium , Elemental semiconductors , Annealing , Doping , Recrystallization
Citation
Duffy, R., Shayesteh, M., White, M., Kearney, J. and Kelleher, A.-M. (2010) 'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization', Applied Physics Letters, 96(23), pp. 231909. doi: 10.1063/1.3452345
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http://aip.scitation.org/doi/abs/10.1063/1.3452345
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https://hdl.handle.net/10468/4340
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Tyndall National Institute - Journal Articles
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© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Duffy, R., Shayesteh, M., White, M., Kearney, J. and Kelleher, A.-M. (2010) 'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization', Applied Physics Letters, 96(23), pp. 231909 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3452345