Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections
Loading...
Files
Published Version
Date
2010
Authors
O'Regan, Terrance P.
Hurley, Paul K.
Sorée, Bart
Fischetti, Massimo V.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
The capacitance-voltage (C-V) characteristic is calculated for p-type In0.53Ga0.47As metal-oxide-semiconductor (MOS) structures based on a self-consistent Poisson-Schroumldinger solution. For strong inversion, charge quantization leads to occupation of the satellite valleys which appears as a sharp increase in the capacitance toward the oxide capacitance. The results indicate that the charge quantization, even in the absence of interface defects (D-it), is a contributing factor to the experimental observation of an almost symmetric C-V response for In0.53Ga0.47As MOS structures. In addition, nonparabolic corrections are shown to enhance the depopulation of the Gamma valley, shifting the capacitance increase to lower inversion charge densities. (C) 2010 American Institute of Physics. (doi:10.1063/1.3436645)
Description
Keywords
Inversion-layers , Band-structure , MOSFETs , Aluminium compounds , Capacitance , Charge density waves , Gallium arsenide , III-V semiconductors , Indium compounds , MIS structures , Poisson equation , SCF calculations , Schrodinger equation , Metal insulator semiconductor structures , Capacitance , Interface structure , Semiconductors
Citation
O’Regan, T. P., Hurley, P. K., Sorée, B. and Fischetti, M. V. (2010) 'Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections', Applied Physics Letters, 96(21), pp. 213514. doi: 10.1063/1.3436645
Copyright
© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Regan, T. P., Hurley, P. K., Sorée, B. and Fischetti, M. V. (2010) 'Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections', Applied Physics Letters, 96(21), pp. 213514 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3436645