Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

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dc.contributor.author Shin, Byungha
dc.contributor.author Weber, Justin R.
dc.contributor.author Long, Rathnait D.
dc.contributor.author Hurley, Paul K.
dc.contributor.author Van de Walle, Chris G.
dc.contributor.author McIntyre, Paul C.
dc.date.accessioned 2017-07-28T11:22:09Z
dc.date.available 2017-07-28T11:22:09Z
dc.date.issued 2010
dc.identifier.citation Shin, B., Weber, J. R., Long, R. D., Hurley, P. K., Walle, C. G. V. d. and McIntyre, P. C. (2010) 'Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates', Applied Physics Letters, 96(15), pp. 152908. doi: 10.1063/1.3399776 en
dc.identifier.volume 96
dc.identifier.issued 15
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4343
dc.identifier.doi 10.1063/1.3399776
dc.description.abstract We report experimental and theoretical studies of defects producing fixed charge within Al(2)O(3) layers grown by atomic layer deposition (ALD) on In(0.53)Ga(0.47)As(001) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt/ALD-Al(2)O(3)/n-In(0.53)Ga(0.47)As suggested the presence of positive bulk fixed charge and negative interfacial fixed charge within ALD-Al(2)O(3). We identified oxygen and aluminum dangling bonds (DBs) as the origin of the fixed charge. First-principles calculations predicted possible passivation of both O and Al DBs, which would neutralize fixed charge, and this prediction was confirmed experimentally; postmetallization forming gas anneal removed most of the fixed charge in ALD-Al(2)O(3). (C) 2010 American Institute of Physics. (doi:10.1063/1.3399776) en
dc.description.sponsorship Semiconductor Research Corporation (NonClassical CMOS Center Task No. 1437.003 and Grant No. 2009- VJ-1867); Fulbright Association (Irish Fulbright Commission; Fulbright USA) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3399776
dc.rights © 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Shin, B., Weber, J. R., Long, R. D., Hurley, P. K., Walle, C. G. V. d. and McIntyre, P. C. (2010) 'Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates', Applied Physics Letters, 96(15), pp. 152908 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3430061 en
dc.subject Total-energy calculations en
dc.subject Augmented-wave method en
dc.subject Basis-set en
dc.subject Al203 en
dc.subject Defects en
dc.subject Silicon en
dc.subject Stacks en
dc.subject Films en
dc.subject Aluminium compounds en
dc.subject Atomic layer deposition en
dc.subject Crystal defects en
dc.subject Dangling bonds en
dc.subject Gallium arsenide en
dc.subject Hydrogenation en
dc.subject III-V semiconductors en
dc.subject Indium compounds en
dc.subject Passivation en
dc.subject Substrates en
dc.subject Ozone en
dc.subject Passivation en
dc.subject Thin films en
dc.title Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Paul Hurley, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: paul.hurley@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000276794100054
dc.contributor.funder Semiconductor Research Corporation
dc.contributor.funder Intel Corporation
dc.contributor.funder Fulbright Association
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.identifier.articleid 152908


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