dc.contributor.author |
Shin, Byungha |
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dc.contributor.author |
Weber, Justin R. |
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dc.contributor.author |
Long, Rathnait D. |
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dc.contributor.author |
Hurley, Paul K. |
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dc.contributor.author |
Van de Walle, Chris G. |
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dc.contributor.author |
McIntyre, Paul C. |
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dc.date.accessioned |
2017-07-28T11:22:09Z |
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dc.date.available |
2017-07-28T11:22:09Z |
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dc.date.issued |
2010 |
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dc.identifier.citation |
Shin, B., Weber, J. R., Long, R. D., Hurley, P. K., Walle, C. G. V. d. and McIntyre, P. C. (2010) 'Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates', Applied Physics Letters, 96(15), pp. 152908. doi: 10.1063/1.3399776 |
en |
dc.identifier.volume |
96 |
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dc.identifier.issued |
15 |
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dc.identifier.startpage |
1 |
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dc.identifier.endpage |
3 |
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dc.identifier.issn |
0003-6951 |
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dc.identifier.issn |
1077-3118 |
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dc.identifier.uri |
http://hdl.handle.net/10468/4343 |
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dc.identifier.doi |
10.1063/1.3399776 |
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dc.description.abstract |
We report experimental and theoretical studies of defects producing fixed charge within Al(2)O(3) layers grown by atomic layer deposition (ALD) on In(0.53)Ga(0.47)As(001) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt/ALD-Al(2)O(3)/n-In(0.53)Ga(0.47)As suggested the presence of positive bulk fixed charge and negative interfacial fixed charge within ALD-Al(2)O(3). We identified oxygen and aluminum dangling bonds (DBs) as the origin of the fixed charge. First-principles calculations predicted possible passivation of both O and Al DBs, which would neutralize fixed charge, and this prediction was confirmed experimentally; postmetallization forming gas anneal removed most of the fixed charge in ALD-Al(2)O(3). (C) 2010 American Institute of Physics. (doi:10.1063/1.3399776) |
en |
dc.description.sponsorship |
Semiconductor Research Corporation (NonClassical
CMOS Center Task No. 1437.003 and Grant No. 2009-
VJ-1867); Fulbright Association (Irish Fulbright Commission; Fulbright USA) |
en |
dc.format.mimetype |
application/pdf |
en |
dc.language.iso |
en |
en |
dc.publisher |
AIP Publishing |
en |
dc.relation.uri |
http://aip.scitation.org/doi/abs/10.1063/1.3399776 |
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dc.rights |
© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Shin, B., Weber, J. R., Long, R. D., Hurley, P. K., Walle, C. G. V. d. and McIntyre, P. C. (2010) 'Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates', Applied Physics Letters, 96(15), pp. 152908 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3430061 |
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dc.subject |
Total-energy calculations |
en |
dc.subject |
Augmented-wave method |
en |
dc.subject |
Basis-set |
en |
dc.subject |
Al203 |
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dc.subject |
Defects |
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dc.subject |
Silicon |
en |
dc.subject |
Stacks |
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dc.subject |
Films |
en |
dc.subject |
Aluminium compounds |
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dc.subject |
Atomic layer deposition |
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dc.subject |
Crystal defects |
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dc.subject |
Dangling bonds |
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dc.subject |
Gallium arsenide |
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dc.subject |
Hydrogenation |
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dc.subject |
III-V semiconductors |
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dc.subject |
Indium compounds |
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dc.subject |
Passivation |
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dc.subject |
Substrates |
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dc.subject |
Ozone |
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dc.subject |
Passivation |
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dc.subject |
Thin films |
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dc.title |
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates |
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dc.type |
Article (peer-reviewed) |
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dc.internal.authorcontactother |
Paul Hurley, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: paul.hurley@tyndall.ie |
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dc.internal.availability |
Full text available |
en |
dc.description.version |
Published Version |
en |
dc.internal.wokid |
WOS:000276794100054 |
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dc.contributor.funder |
Semiconductor Research Corporation
|
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dc.contributor.funder |
Intel Corporation
|
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dc.contributor.funder |
Fulbright Association
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dc.description.status |
Peer reviewed |
en |
dc.identifier.journaltitle |
Applied Physics Letters |
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dc.internal.IRISemailaddress |
paul.hurley@tyndall.ie |
en |
dc.identifier.articleid |
152908 |
|