Reduced electric field in junctionless transistors
Colinge, Jean-Pierre; Lee, Chi-Woo; Ferain, Isabelle; Akhavan, Nima Dehdashti; Yan, Ran; Razavi, Pedram; Yu, Ran; Nazarov, Alexei N.; Doria, Rodrigo T.
Date:
2010
Copyright:
© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Colinge, J.-P., Lee, C.-W., Ferain, I., Akhavan, N. D., Yan, R., Razavi, P., Yu, R., Nazarov, A. N. and Doria, R. T. (2010) 'Reduced electric field in junctionless transistors', Applied Physics Letters, 96(7), pp. 073510 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3299014
Citation:
Colinge, J.-P., Lee, C.-W., Ferain, I., Akhavan, N. D., Yan, R., Razavi, P., Yu, R., Nazarov, A. N. and Doria, R. T. (2010) 'Reduced electric field in junctionless transistors', Applied Physics Letters, 96(7), pp. 073510. doi: 10.1063/1.3299014
Abstract:
The electric field perpendicular to the current flow is found to be significantly lower in junctionless transistors than in regular inversion-mode or accumulation-mode field-effect transistors. Since inversion channel mobility in metal-oxide-semionductor transistors is reduced by this electric field, the low field in junctionless transistor may give them an advantage in terms of current drive for nanometer-scale complementary metal-oxide semiconductor applications. This observation still applies when quantum confinement is present. (C) 2010 American Institute of Physics. (doi:10.1063/1.3299014)
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