Reduced electric field in junctionless transistors
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Published Version
Date
2010
Authors
Colinge, Jean-Pierre
Lee, Chi-Woo
Ferain, Isabelle
Akhavan, Nima Dehdashti
Yan, Ran
Razavi, Pedram
Yu, Ran
Nazarov, Alexei N.
Doria, Rodrigo T.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
The electric field perpendicular to the current flow is found to be significantly lower in junctionless transistors than in regular inversion-mode or accumulation-mode field-effect transistors. Since inversion channel mobility in metal-oxide-semionductor transistors is reduced by this electric field, the low field in junctionless transistor may give them an advantage in terms of current drive for nanometer-scale complementary metal-oxide semiconductor applications. This observation still applies when quantum confinement is present. (C) 2010 American Institute of Physics. (doi:10.1063/1.3299014)
Description
Keywords
Trigate soi mosfets , Inversion layer mobility , Si mosfets , Universality , Silicon , CMOS integrated circuits , Electric fields , Doping , MOSFETs , Carrier mobility
Citation
Colinge, J.-P., Lee, C.-W., Ferain, I., Akhavan, N. D., Yan, R., Razavi, P., Yu, R., Nazarov, A. N. and Doria, R. T. (2010) 'Reduced electric field in junctionless transistors', Applied Physics Letters, 96(7), pp. 073510. doi: 10.1063/1.3299014
Copyright
© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Colinge, J.-P., Lee, C.-W., Ferain, I., Akhavan, N. D., Yan, R., Razavi, P., Yu, R., Nazarov, A. N. and Doria, R. T. (2010) 'Reduced electric field in junctionless transistors', Applied Physics Letters, 96(7), pp. 073510 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3299014