Electron energy band alignment at the (100)Si/MgO interface

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dc.contributor.author Afanas'ev, V. V.
dc.contributor.author Stesmans, A.
dc.contributor.author Cherkaoui, Karim
dc.contributor.author Hurley, Paul K.
dc.date.accessioned 2017-07-28T11:22:09Z
dc.date.available 2017-07-28T11:22:09Z
dc.date.issued 2010
dc.identifier.citation Afanas’ev, V. V., Stesmans, A., Cherkaoui, K. and Hurley, P. K. (2010) 'Electron energy band alignment at the (100)Si/MgO interface', Applied Physics Letters, 96(5), pp. 052103. doi: 10.1063/1.3294328 en
dc.identifier.volume 96
dc.identifier.issued 5
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4347
dc.identifier.doi 10.1063/1.3294328
dc.description.abstract The electron energy band diagram at the (100)Si/MgO interface is characterized using internal photoemission of electrons and holes from Si into the oxide. For the as-deposited amorphous MgO the interface barriers correspond to a band gap width of 6.1 eV, i.e., much lower than the conventionally assumed bulk crystal value (7.83 eV). The annealing-induced crystallization of MgO mostly affects the energy of the valence band while the conduction band bottom retains its energy position at 3.37 +/- 0.05 eV above the top of the silicon valence band.(C) 2010 American Institute of Physics. (doi:10.1063/1.3294328) en
dc.description.sponsorship Fonds Wetenschappelijk Onderzoek ((FWO)-Vlaanderen Grant No.; Science Foundation Ireland (FORME Strategic Research Cluster Award No. 07/SRC/I1172) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3294328
dc.rights © 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Afanas’ev, V. V., Stesmans, A., Cherkaoui, K. and Hurley, P. K. (2010) 'Electron energy band alignment at the (100)Si/MgO interface', Applied Physics Letters, 96(5), pp. 052103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3294328 en
dc.subject Internal photoemission en
dc.subject Films en
dc.subject Mgo en
dc.subject Stability en
dc.subject Oxides en
dc.subject Amorphous state en
dc.subject Annealing en
dc.subject Conduction bands en
dc.subject Crystallisation en
dc.subject Elemental semiconductors en
dc.subject Energy gap en
dc.subject Interface states en
dc.subject Magnesium compounds en
dc.subject Photoemission en
dc.subject Silicon en
dc.subject Valence bands en
dc.subject Gold en
dc.subject Photoelectric conversion en
dc.subject Band gap en
dc.subject Electrodes en
dc.title Electron energy band alignment at the (100)Si/MgO interface en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Paul Hurley, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: paul.hurley@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000274319500044
dc.contributor.funder Fonds Wetenschappelijk Onderzoek
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.identifier.articleid 52103

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