Influence of Si-N complexes on the electronic properties of GaAsN alloys

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Date
2009
Authors
Jin, Y.
He, Y.
Cheng, H.
Jock, R. M.
Dannecker, Tassilo
Reason, M.
Mintairov, A. M.
Kurdak, C.
Merz, J. L.
Goldman, R. S.
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AIP Publishing
Published Version
10.1063/1.3198207
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Abstract
We have investigated the influence of Si-N complexes on the electronic properties of GaAsN alloys. The presence of Si-N complexes is suggested by a decrease in carrier concentration, n, with increasing N-composition, observed in GaAsN: Si films but not in modulation-doped heterostructures. In addition, for GaAsN: Te (GaAsN:Si), n increases substantially (minimally) with annealing-T, suggesting a competition between annealing-induced Si-N complex formation and a reduced concentration of N-related traps. Since Si-N complex formation is enhanced for GaAsN: Si growth with the (2x4) reconstruction, which has limited group V sites for As-N exchange, the (Si-N)(As) interstitial pair is identified as the dominant Si-N complex. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3198207)
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Keywords
Molecular-beam epitaxy , Luminescence efficiency , Nitrogen , Arsenides , Ga(as,n) , Growth , Layers , III-V semiconductors , Annealing , Doping , Thin film growth , Thin films
Citation
Jin, Y., He, Y., Cheng, H., Jock, R. M., Dannecker, T., Reason, M., Mintairov, A. M., Kurdak, C., Merz, J. L. and Goldman, R. S. (2009) 'Influence of Si–N complexes on the electronic properties of GaAsN alloys', Applied Physics Letters, 95(9), pp. 092109.
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http://aip.scitation.org/doi/abs/10.1063/1.3198207
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https://hdl.handle.net/10468/4354
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Tyndall National Institute - Journal Articles
Copyright
© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Jin, Y., He, Y., Cheng, H., Jock, R. M., Dannecker, T., Reason, M., Mintairov, A. M., Kurdak, C., Merz, J. L. and Goldman, R. S. (2009) 'Influence of Si–N complexes on the electronic properties of GaAsN alloys', Applied Physics Letters, 95(9), pp. 092109 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3198207