Influence of Si-N complexes on the electronic properties of GaAsN alloys

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dc.contributor.author Jin, Y.
dc.contributor.author He, Y.
dc.contributor.author Cheng, H.
dc.contributor.author Jock, R. M.
dc.contributor.author Dannecker, Tassilo
dc.contributor.author Reason, M.
dc.contributor.author Mintairov, A. M.
dc.contributor.author Kurdak, C.
dc.contributor.author Merz, J. L.
dc.contributor.author Goldman, R. S.
dc.date.accessioned 2017-07-28T11:22:10Z
dc.date.available 2017-07-28T11:22:10Z
dc.date.issued 2009
dc.identifier.citation Jin, Y., He, Y., Cheng, H., Jock, R. M., Dannecker, T., Reason, M., Mintairov, A. M., Kurdak, C., Merz, J. L. and Goldman, R. S. (2009) 'Influence of Si–N complexes on the electronic properties of GaAsN alloys', Applied Physics Letters, 95(9), pp. 092109. en
dc.identifier.volume 95
dc.identifier.issued 9
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4354
dc.identifier.doi 10.1063/1.3198207
dc.description.abstract We have investigated the influence of Si-N complexes on the electronic properties of GaAsN alloys. The presence of Si-N complexes is suggested by a decrease in carrier concentration, n, with increasing N-composition, observed in GaAsN: Si films but not in modulation-doped heterostructures. In addition, for GaAsN: Te (GaAsN:Si), n increases substantially (minimally) with annealing-T, suggesting a competition between annealing-induced Si-N complex formation and a reduced concentration of N-related traps. Since Si-N complex formation is enhanced for GaAsN: Si growth with the (2x4) reconstruction, which has limited group V sites for As-N exchange, the (Si-N)(As) interstitial pair is identified as the dominant Si-N complex. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3198207) en
dc.description.sponsorship National Science Foundation (Grant No. DMR 0606406) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3198207
dc.rights © 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Jin, Y., He, Y., Cheng, H., Jock, R. M., Dannecker, T., Reason, M., Mintairov, A. M., Kurdak, C., Merz, J. L. and Goldman, R. S. (2009) 'Influence of Si–N complexes on the electronic properties of GaAsN alloys', Applied Physics Letters, 95(9), pp. 092109 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3198207 en
dc.subject Molecular-beam epitaxy en
dc.subject Luminescence efficiency en
dc.subject Nitrogen en
dc.subject Arsenides en
dc.subject Ga(as,n) en
dc.subject Growth en
dc.subject Layers en
dc.subject III-V semiconductors en
dc.subject Annealing en
dc.subject Doping en
dc.subject Thin film growth en
dc.subject Thin films en
dc.title Influence of Si-N complexes on the electronic properties of GaAsN alloys en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Tassilo Dannecker, Tyndall National Institute, University College Cork, Cork, Ireland, +353 21 490 3000 en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000269625800036
dc.contributor.funder National Science Foundation
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress tdannecker@hoffmanneitle.com en
dc.identifier.articleid 92109


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