Electrical characterization of the soft breakdown failure mode in MgO layers
Miranda, Enrique; O'Connor, Éamon; Cherkaoui, Karim; Monaghan, Scott; Long, Rathnait D.; O'Connell, Dan; Hurley, Paul K.; Hughes, Greg; Casey, P.
Date:
2009
Copyright:
© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Miranda, E., O’Connor, E., Cherkaoui, K., Monaghan, S., Long, R., O’Connell, D., Hurley, P. K., Hughes, G. and Casey, P. (2009) 'Electrical characterization of the soft breakdown failure mode in MgO layers', Applied Physics Letters, 95(1), pp. 012901 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3167827
Citation:
Miranda, E., O’Connor, E., Cherkaoui, K., Monaghan, S., Long, R., O’Connell, D., Hurley, P. K., Hughes, G. and Casey, P. (2009) 'Electrical characterization of the soft breakdown failure mode in MgO layers', Applied Physics Letters, 95(1), pp. 012901. doi: 10.1063/1.3167827
Abstract:
The soft breakdown (SBD) failure mode in 20 nm thick MgO dielectric layers grown on Si substrates was investigated. We show that during a constant voltage stress, charge trapping and progressive breakdown coexist, and that the degradation dynamics is captured by a power-law time dependence. We also show that the SBD current-voltage (I-V) characteristics follow the power-law model I = aV(b) typical of this conduction mechanism but in a wider voltage window than the one reported in the past for SiO(2). The relationship between the magnitude of the current and the normalized differential conductance was analyzed. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3167827)
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