Intradot dynamics of InAs quantum dot based electroabsorbers

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dc.contributor.author Piwonski, Tomasz
dc.contributor.author Pulka, Jaroslaw
dc.contributor.author Madden, Gillian
dc.contributor.author Huyet, Guillaume
dc.contributor.author Houlihan, John
dc.contributor.author Viktorov, Evgeny A.
dc.contributor.author Erneux, Thomas
dc.contributor.author Mandel, Paul
dc.date.accessioned 2017-07-28T11:47:32Z
dc.date.available 2017-07-28T11:47:32Z
dc.date.issued 2009
dc.identifier.citation Piwonski, T., Pulka, J., Madden, G., Huyet, G., Houlihan, J., Viktorov, E. A., Erneux, T. and Mandel, P. (2009) 'Intradot dynamics of InAs quantum dot based electroabsorbers', Applied Physics Letters, 94(12), pp. 123504. doi: 10.1063/1.3106633 en
dc.identifier.volume 94
dc.identifier.issued 12
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4361
dc.identifier.doi 10.1063/1.3106633
dc.description.abstract The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots' ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3106633) en
dc.description.sponsorship Science Foundation Ireland (Contract No. 07/IN.1/I929); Higher Education Authority (INSPIRE Programme, funded by the Irish Government’s Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007-2013) Institutes of Technology Ireland (Strand I Programme); en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3106633
dc.rights © 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Piwonski, T., Pulka, J., Madden, G., Huyet, G., Houlihan, J., Viktorov, E. A., Erneux, T. and Mandel, P. (2009) 'Intradot dynamics of InAs quantum dot based electroabsorbers', Applied Physics Letters, 94(12), pp. 123504 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3106633 en
dc.subject Lasers en
dc.subject Auger effect en
dc.subject Carrier relaxation time en
dc.subject Electroabsorption en
dc.subject Electro-optical devices en
dc.subject Excited states en
dc.subject Gallium arsenide en
dc.subject Ground states en
dc.subject III-V semiconductors en
dc.subject Indium compounds en
dc.subject Nonlinear optics en
dc.subject Optical materials en
dc.subject Optical waveguides en
dc.subject Phonons en
dc.subject Semiconductor quantum dots en
dc.subject Quantum dots en
dc.subject Wetting en
dc.subject Carrier relaxation times en
dc.subject Excited states en
dc.title Intradot dynamics of InAs quantum dot based electroabsorbers en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Tomasz Piwonski, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 E-mail: tomasz.piwonski@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000264633500075
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Institutes of Technology Ireland
dc.contributor.funder Fonds De La Recherche Scientifique - FNRS
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress tomasz.piwonski@tyndall.ie en
dc.identifier.articleid 123504


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