Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods
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Date
2009
Authors
O'Connor, Éamon
Monaghan, Scott
Long, Rathnait D.
O'Mahony, Aileen
Povey, Ian M.
Cherkaoui, Karim
Pemble, Martyn E.
Brammertz, G.
Heyns, M.
Newcomb, Simon B.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
Electrical properties of metal-oxide-semiconductor capacitors using atomic layer deposited HfO2 on n-type GaAs or InxGa1-xAs (x=0.53, 0.30, 0.15) epitaxial layers were investigated. Capacitance-voltage (CV) measurements indicated large temperature and frequency dispersion at positive gate bias in devices using n-type GaAs and low In content (x=0.30, 0.15) InxGa1-xAs layers, which is significantly reduced for devices using In0.53Ga0.47As. For In0.53Ga0.47As devices, the CV response at negative gate bias is most likely characteristic of an interface state response and may not be indicative of true inversion. The conductance technique on Pd/HfO2/In0.53Ga0.47As/InP shows reductions in interface state densities by In0.53Ga0.47As surface passivation and forming gas annealing (325 degrees C). (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3089688)
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Keywords
Silicon , Devices , Annealing , Atomic layer epitaxial growth , Gallium arsenide , Hafnium compounds , III-V semiconductors , Indium compounds , MIS structures , MOS capacitors , Palladium , Passivation , Semiconductor epitaxial layers , Semiconductor growth , III-V semiconductors , Epitaxy , Temperature measurement , Capacitance , Interfacial properties
Citation
O’Connor, É., Monaghan, S., Long, R. D., O’Mahony, A., Povey, I. M., Cherkaoui, K., Pemble, M. E., Brammertz, G., Heyns, M., Newcomb, S. B., Afanas’ev, V. V. and Hurley, P. K. (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods', Applied Physics Letters, 94(10), pp. 102902. doi: 10.1063/1.3089688
Copyright
© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Connor, É., Monaghan, S., Long, R. D., O’Mahony, A., Povey, I. M., Cherkaoui, K., Pemble, M. E., Brammertz, G., Heyns, M., Newcomb, S. B., Afanas’ev, V. V. and Hurley, P. K. (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods', Applied Physics Letters, 94(10), pp. 102902 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3089688