Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods

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dc.contributor.author O'Connor, Éamon
dc.contributor.author Monaghan, Scott
dc.contributor.author Long, Rathnait D.
dc.contributor.author O'Mahony, Aileen
dc.contributor.author Povey, Ian M.
dc.contributor.author Cherkaoui, Karim
dc.contributor.author Pemble, Martyn E.
dc.contributor.author Brammertz, G.
dc.contributor.author Heyns, M.
dc.contributor.author Newcomb, Simon B.
dc.contributor.author Afanas'ev, V. V.
dc.contributor.author Hurley, Paul K.
dc.date.accessioned 2017-07-28T11:47:32Z
dc.date.available 2017-07-28T11:47:32Z
dc.date.issued 2009
dc.identifier.citation O’Connor, É., Monaghan, S., Long, R. D., O’Mahony, A., Povey, I. M., Cherkaoui, K., Pemble, M. E., Brammertz, G., Heyns, M., Newcomb, S. B., Afanas’ev, V. V. and Hurley, P. K. (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods', Applied Physics Letters, 94(10), pp. 102902. doi: 10.1063/1.3089688 en
dc.identifier.volume 94
dc.identifier.issued 10
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4363
dc.identifier.doi 10.1063/1.3089688
dc.description.abstract Electrical properties of metal-oxide-semiconductor capacitors using atomic layer deposited HfO2 on n-type GaAs or InxGa1-xAs (x=0.53, 0.30, 0.15) epitaxial layers were investigated. Capacitance-voltage (CV) measurements indicated large temperature and frequency dispersion at positive gate bias in devices using n-type GaAs and low In content (x=0.30, 0.15) InxGa1-xAs layers, which is significantly reduced for devices using In0.53Ga0.47As. For In0.53Ga0.47As devices, the CV response at negative gate bias is most likely characteristic of an interface state response and may not be indicative of true inversion. The conductance technique on Pd/HfO2/In0.53Ga0.47As/InP shows reductions in interface state densities by In0.53Ga0.47As surface passivation and forming gas annealing (325 degrees C). (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3089688) en
dc.description.sponsorship Science Foundation Ireland (Grant Nos. 05/IN/1751, 07/SRC/I1172) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.3089688
dc.rights © 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Connor, É., Monaghan, S., Long, R. D., O’Mahony, A., Povey, I. M., Cherkaoui, K., Pemble, M. E., Brammertz, G., Heyns, M., Newcomb, S. B., Afanas’ev, V. V. and Hurley, P. K. (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods', Applied Physics Letters, 94(10), pp. 102902 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3089688 en
dc.subject Silicon en
dc.subject Devices en
dc.subject Annealing en
dc.subject Atomic layer epitaxial growth en
dc.subject Gallium arsenide en
dc.subject Hafnium compounds en
dc.subject III-V semiconductors en
dc.subject Indium compounds en
dc.subject MIS structures en
dc.subject MOS capacitors en
dc.subject Palladium en
dc.subject Passivation en
dc.subject Semiconductor epitaxial layers en
dc.subject Semiconductor growth en
dc.subject III-V semiconductors en
dc.subject Epitaxy en
dc.subject Temperature measurement en
dc.subject Capacitance en
dc.subject Interfacial properties en
dc.title Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Paul Hurley, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: paul.hurley@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000264280000068
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Irish Research Council for Science, Engineering and Technology
dc.contributor.funder Intel Corporation
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.identifier.articleid 102902


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