Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2
Afanas'ev, V. V.; Badylevich, M.; Stesmans, A.; Brammertz, G.; Delabie, A.; Sionke, S.; O'Mahony, A.; Povey, I. M.; Pemble, M. E.; O'Connor, E.; Hurley, P. K.; Newcomb, S. B.
Date:
2008
Copyright:
© 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Afanas’ev, V. V., Badylevich, M., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I. M., Pemble, M. E., O’Connor, E., Hurley, P. K. and Newcomb, S. B. (2008) 'Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2', Applied Physics Letters, 93(21), pp. 212104 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3021374
Citation:
Afanas’ev, V. V., Badylevich, M., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I. M., Pemble, M. E., O’Connor, E., Hurley, P. K. and Newcomb, S. B. (2008) 'Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2', Applied Physics Letters, 93(21), pp. 212104.
Abstract:
Band alignment at the interfaces of (100)GaAs with Al2O3 and HfO2 grown using atomic layer deposition is determined using internal photoemission and photoconductivity measurements. Though the inferred conduction and valence band offsets for both insulators were found to be close to or larger than 2 eV, the interlayer grown by concomitant oxidation of GaAs reduces the barrier for electrons by approximately 1 eV. The latter may pose significant problems associated with electron injection from GaAs into the oxide. (C) 2008 American Institute of Physics. (DOI: 10.1063/1.3021374)
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