Energy state distributions of the P(b) centers at the (100), (110), and (111) Si/SiO(2) interfaces investigated by Laplace deep level transient spectroscopy
Dobaczewski, L.; Bernardini, S.; Kruszewski, P.; Hurley, Paul K.; Markevich, V. P.; Hawkins, I. D.; Peaker, A. R.
Date:
2008
Copyright:
© 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Dobaczewski, L., Bernardini, S., Kruszewski, P., Hurley, P. K., Markevich, V. P., Hawkins, I. D. and Peaker, A. R. (2008) 'Energy state distributions of the Pb centers at the (100), (110), and (111) Si∕SiO2 interfaces investigated by Laplace deep level transient spectroscopy', Applied Physics Letters, 92(24), pp. 242104 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2939001
Citation:
Dobaczewski, L., Bernardini, S., Kruszewski, P., Hurley, P. K., Markevich, V. P., Hawkins, I. D. and Peaker, A. R. (2008) 'Energy state distributions of the Pb centers at the (100), (110), and (111) Si∕SiO2 interfaces investigated by Laplace deep level transient spectroscopy', Applied Physics Letters, 92(24), pp. 242104. doi: 10.1063/1.2939001
Abstract:
The energy distribution of the P(b) centers at the Si/SiO(2) interface has been determined using isothermal laplace deep level transient spectroscopy. For the (111) and (110) interface orientations, the distributions are similar and centered at 0.38 eV below the silicon conduction band. This is consistent with only P(b0) states being present. For the (100) orientation, two types of the interface states are observed: one similar to the (111) and (110) orientations while the other has a negative-U character in which the emission rate versus surface potential dependence is qualitatively different from that observed for P(b0) and is presumed to be P(b1). (C) 2008 American Institute of Physics. (DOI: 10.1063/1.2939001)
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