Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors

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dc.contributor.author Colinge, Jean-Pierre
dc.contributor.author Afzalian, Aryan
dc.contributor.author Lee, Chi-Woo
dc.contributor.author Yan, Ran
dc.contributor.author Akhavan, Nima Dehdashti
dc.date.accessioned 2017-07-28T11:47:33Z
dc.date.available 2017-07-28T11:47:33Z
dc.date.issued 2008
dc.identifier.citation Colinge, J.-P., Afzalian, A., Lee, C.-W., Yan, R. and Akhavan, N. D. (2008) 'Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors', Applied Physics Letters, 92(13), pp. 133511. doi: 10.1063/1.2907330 en
dc.identifier.volume 92
dc.identifier.issued 13
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4371
dc.identifier.doi 10.1063/1.2907330
dc.description.abstract The minimum energy of the first conduction subband varies with gate voltage in trigate silicon-on-insulator metal-oxide-silicon field-effect transistors (MOSFETs) in subthreshold operation. In an inversion-mode trigate device, the energy level of the lowest subband increases with electron concentration, while it decreases under the same conditions in some accumulation-mode devices. As a result of this quantum effect, the subthreshold swing of accumulation-mode trigate FETs is smaller than predicted by classical theory. This effect is not observed in fin-shaped FETs and gate-all-around MOSFETs and can be amplified by modifying the device cross section. (C) 2008 American Institute of Physics. (DOI: 10.1063/1.2907330) en
dc.description.sponsorship Science Foundation Ireland (Grant No. 05/IN/I888) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.2907330
dc.rights © 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Colinge, J.-P., Afzalian, A., Lee, C.-W., Yan, R. and Akhavan, N. D. (2008) 'Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors', Applied Physics Letters, 92(13), pp. 133511 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2907330 en
dc.subject Soi mosfets en
dc.subject Gate en
dc.subject Silicon en
dc.subject Field effect transistors en
dc.subject Wave functions en
dc.subject MOSFETs en
dc.subject Electron gas en
dc.title Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Jean-Pierre Colinge, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: jean-pierre.colinge@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000254669900108
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress jean-pierre.colinge@tyndall.ie en
dc.identifier.articleid 133511


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