Broadband quantum dot micro-light-emitting diodes with parabolic sidewalls
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Maaskant, Pleun P.
Corbett, Brian M.
Arrays of long wavelength, self-organized InGaAs quantum dot micron sized light-emitting diodes (mu-LEDs) with parabolic sidewalls are introduced. The parabolic profiles of the mu-LEDs produced by resist reflow and controlled dry etching improve the extraction efficiency from the LEDs by redirection of the light into the escape cone by reflection from the sidewalls. A fourfold increase in the substrate emitted power density compared to a reference planar LED is measured. The reflected light is verified to be azimuthally polarized. The spectral width of the emission can be greater than 200 nm. (C) 2008 American Institute of Physics. (DOI: 10.1063/1.2898731)
Efficiency , Lasers , Light emitting diodes , Quantum dots , III-V semiconductors , Emission spectra , Charge injection
Tanriseven, S., Maaskant, P. and Corbett, B. (2008) 'Broadband quantum dot micro-light-emitting diodes with parabolic sidewalls', Applied Physics Letters, 92(12), pp. 123501. doi: 10.1063/1.2898731
© 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Tanriseven, S., Maaskant, P. and Corbett, B. (2008) 'Broadband quantum dot micro-light-emitting diodes with parabolic sidewalls', Applied Physics Letters, 92(12), pp. 123501 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2898731