In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric

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dc.contributor.author O'Connor, Éamon
dc.contributor.author Long, Rathnait D.
dc.contributor.author Cherkaoui, Karim
dc.contributor.author Thomas, Kevin K.
dc.contributor.author Chalvet, Francis N.
dc.contributor.author Povey, Ian M.
dc.contributor.author Pemble, Martyn E.
dc.contributor.author Hurley, Paul K.
dc.contributor.author Brennan, B.
dc.contributor.author Hughes, Gregory
dc.contributor.author Newcomb, Simon B.
dc.date.accessioned 2017-07-28T11:47:33Z
dc.date.available 2017-07-28T11:47:33Z
dc.date.issued 2008
dc.identifier.citation O’Connor, E., Long, R. D., Cherkaoui, K., Thomas, K. K., Chalvet, F., Povey, I. M., Pemble, M. E., Hurley, P. K., Brennan, B., Hughes, G. and Newcomb, S. B. (2008) 'In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric', Applied Physics Letters, 92(2), pp. 022902. doi: 10.1063/1.2829586 en
dc.identifier.volume 92
dc.identifier.issued 2
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4373
dc.identifier.doi 10.1063/1.2829586
dc.description.abstract We have studied an in situ passivation of In(0.53)Ga(0.47)As, based on H(2)S exposure (50-350 degrees C) following metal organic vapor phase epitaxy growth, prior to atomic layer deposition of HfO(2) using Hf[N(CH(3))(2)](4) and H(2)O precursors. X-ray photoelectron spectroscopy revealed the suppression of As oxide formation in air exposed InGaAs surfaces for all H(2)S exposure temperatures. Transmission electron microscopy analysis demonstrates a reduction of the interface oxide between the In(0.53)Ga(0.47)As epitaxial layer and the amorphous HfO(2) resulting from the in situ H(2)S passivation. The capacitance-voltage and current-voltage behavior of Pd/HfO(2)/In(0.53)Ga(0.47)As/InP structures demonstrates that the electrical characteristics of samples exposed to 50 degrees C H(2)S at the end of the metal-organic vapor-phase epitaxy In(0.53)Ga(0.47)As growth are comparable to those obtained using an ex situ aqueous (NH(4))(2)S passivation. (c) 2008 American Institute of Physics. (DOI: 10.1063/1.2829586) en
dc.description.sponsorship Science Foundation Ireland (05/IN/1751); Irish Research Council for Science, Engineering, and Technology; Intel Corporation (Intel Ireland) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.2829586
dc.rights © 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Connor, E., Long, R. D., Cherkaoui, K., Thomas, K. K., Chalvet, F., Povey, I. M., Pemble, M. E., Hurley, P. K., Brennan, B., Hughes, G. and Newcomb, S. B. (2008) 'In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric', Applied Physics Letters, 92(2), pp. 022902 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2829586 en
dc.subject Gaas en
dc.subject Hydrogen en
dc.subject Surface en
dc.subject Films en
dc.subject Passivation en
dc.subject III-V semiconductors en
dc.subject Atomic layer deposition en
dc.subject Surface passivation en
dc.subject X-ray photoelectron spectroscopy en
dc.title In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Paul Hurley, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: paul.hurley@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000252470900070
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Irish Research Council for Science, Engineering and Technology
dc.contributor.funder Intel Corporation
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.identifier.articleid 22902


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