Low-resistance Ni-based Schottky diodes on freestanding n-GaN

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dc.contributor.author Lewis, Liam
dc.contributor.author Corbett, Brian M.
dc.contributor.author O'Mahony, Donagh
dc.contributor.author Maaskant, Pleun P.
dc.date.accessioned 2017-07-28T13:20:06Z
dc.date.available 2017-07-28T13:20:06Z
dc.date.issued 2007
dc.identifier.citation Lewis, L., Corbett, B., Mahony, D. O. and Maaskant, P. P. (2007) 'Low-resistance Ni-based Schottky diodes on freestanding n-GaN', Applied Physics Letters, 91(16), pp. 162103. doi: 10.1063/1.2799739 en
dc.identifier.volume 91
dc.identifier.issued 16
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4376
dc.identifier.doi 10.1063/1.2799739
dc.description.abstract Schottky diodes formed on a low doped (5 x 10(16) cm(-3)) n-type GaN epilayer grown on a n(+) freestanding GaN substrate were studied. The temperature dependent electrical characteristics of Ni contacts on the as-grown material are compared with an aqueous, potassium hydroxide (KOH) treated surface. In both cases the diodes are dominated by thermionic emission in forward bias, with low idealities (1.04 at room temperature) which decrease with increasing temperature, reaching 1.03 at 413 K. The Schottky barrier height is 0.79 +/- 0.05 eV for the as-grown surface compared with 0.85 +/- 0.05 eV for the KOH treated surface at room temperature. This is consistent with an inhomogeneous barrier distribution. The specific on-state resistance of the diodes is 0.57 m Omega cm(2) The KOH treatment reduces the room temperature reverse leakage current density at -30 V to 1 x 10(-5) A cm(-2) compared to 6 x 10(-2) A cm(-2) for the as-grown samples. (C) 2007 American Institute of Physics. (DOI:10.1063/1.2799739) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.2799739
dc.rights © 2007 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Lewis, L., Corbett, B., Mahony, D. O. and Maaskant, P. P. (2007) 'Low-resistance Ni-based Schottky diodes on freestanding n-GaN', Applied Physics Letters, 91(16), pp. 162103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2799739 en
dc.subject Rectifiers en
dc.subject Interfaces en
dc.subject Transport en
dc.subject Contacts en
dc.subject Surface en
dc.subject Films en
dc.subject Schottky barriers en
dc.subject Surface treatments en
dc.subject Doping en
dc.subject Leakage currents en
dc.subject Electrical resistivity en
dc.title Low-resistance Ni-based Schottky diodes on freestanding n-GaN en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Liam Lewis, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: llewis@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000250295700039
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress llewis@tyndall.ie en
dc.identifier.articleid 162103

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