Stress in silicon interlayers at the SiO(x)/Ge interface
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Published Version
Date
2007
Authors
O'Callaghan, Sean
Monaghan, Scott
Elliott, Simon D.
Greer, James C.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
Materials such as germanium display an advantage relative to silicon in terms of carrier mobilities but form poor quality interfaces to oxides. By sandwiching silicon layers between a germanium substrate and the oxide, advantages of the silicon oxide/silicon (SiO(x)/Si) interface can be retained combined with the advantage of a high mobility germanium substrate. Using density functional theory calculations, stress within the silicon interlayer is quantified for different interlayer thicknesses revealing that for up to three silicon layers, the stress in the interlayer is compensated for by the energy gained by forming silicon-oxygen bonds at the interface. (c) 2007 American Institute of Physics. (DOI:10.1063/1.2713122)
Description
Keywords
Germanium mos capacitors , Gate , Passivation , Si , Silicon , Germanium , Elemental semiconductors , Chemical bonds , Interface structure
Citation
O’Callaghan, S., Monaghan, S., Elliott, S. D. and Greer, J. C. (2007) 'Stress in silicon interlayers at the SiOx∕Ge interface', Applied Physics Letters, 90(14), pp. 143511. doi: 10.1063/1.2713122
Copyright
© 2007 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Callaghan, S., Monaghan, S., Elliott, S. D. and Greer, J. C. (2007) 'Stress in silicon interlayers at the SiOx∕Ge interface', Applied Physics Letters, 90(14), pp. 143511 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2713122