Stress in silicon interlayers at the SiO(x)/Ge interface

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dc.contributor.author O'Callaghan, Sean
dc.contributor.author Monaghan, Scott
dc.contributor.author Elliott, Simon D.
dc.contributor.author Greer, James C.
dc.date.accessioned 2017-07-28T13:20:06Z
dc.date.available 2017-07-28T13:20:06Z
dc.date.issued 2007
dc.identifier.citation O’Callaghan, S., Monaghan, S., Elliott, S. D. and Greer, J. C. (2007) 'Stress in silicon interlayers at the SiOx∕Ge interface', Applied Physics Letters, 90(14), pp. 143511. doi: 10.1063/1.2713122 en
dc.identifier.volume 90
dc.identifier.issued 14
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4379
dc.identifier.doi 10.1063/1.2713122
dc.description.abstract Materials such as germanium display an advantage relative to silicon in terms of carrier mobilities but form poor quality interfaces to oxides. By sandwiching silicon layers between a germanium substrate and the oxide, advantages of the silicon oxide/silicon (SiO(x)/Si) interface can be retained combined with the advantage of a high mobility germanium substrate. Using density functional theory calculations, stress within the silicon interlayer is quantified for different interlayer thicknesses revealing that for up to three silicon layers, the stress in the interlayer is compensated for by the energy gained by forming silicon-oxygen bonds at the interface. (c) 2007 American Institute of Physics. (DOI:10.1063/1.2713122) en
dc.description.sponsorship Science Foundation Ireland en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.2713122
dc.rights © 2007 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Callaghan, S., Monaghan, S., Elliott, S. D. and Greer, J. C. (2007) 'Stress in silicon interlayers at the SiOx∕Ge interface', Applied Physics Letters, 90(14), pp. 143511 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2713122 en
dc.subject Germanium mos capacitors en
dc.subject Gate en
dc.subject Passivation en
dc.subject Si en
dc.subject Silicon en
dc.subject Germanium en
dc.subject Elemental semiconductors en
dc.subject Chemical bonds en
dc.subject Interface structure en
dc.title Stress in silicon interlayers at the SiO(x)/Ge interface en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother James Greer,Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: jim.greer@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000245512200108
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress jim.greer@tyndall.ie en
dc.identifier.articleid 143511


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