Characterizing stress in ultrathin silicon wafers

Show simple item record Paul, Indrajit Majeed, Bivragh Razeeb, Kafil M. Barton, John 2017-07-28T13:20:07Z 2017-07-28T13:20:07Z 2006
dc.identifier.citation Paul, I., Majeed, B., Razeeb, K. M. and Barton, J. (2006) 'Characterizing stress in ultrathin silicon wafers', Applied Physics Letters, 89(7), pp. 073506. doi: 10.1063/1.2336212 en
dc.identifier.volume 89
dc.identifier.issued 7
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.doi 10.1063/1.2336212
dc.description.abstract The aim of this letter is to calculate the mechanical grinding induced bow and stress in ultrathin silicon wafers. The reverse leakage current of a p-n junction diode fabricated on a 4 in. silicon wafer was measured for wafers thinned to various thicknesses. A correlation with the residual stress was obtained through band gap narrowing effect. The analytical results were compared with experimental bow measurements using a laser profiler. The bow in 50 mu m thick wafer was found to be less than 2 mm using the current grinding process. (c) 2006 American Institute of Physics. (DOI:10.1063/1.2336212) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2006 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Paul, I., Majeed, B., Razeeb, K. M. and Barton, J. (2006) 'Characterizing stress in ultrathin silicon wafers', Applied Physics Letters, 89(7), pp. 073506 and may be found at en
dc.subject Silicon en
dc.subject Band gap en
dc.subject Leakage currents en
dc.subject Valence bands en
dc.subject Hydrostatics en
dc.title Characterizing stress in ultrathin silicon wafers en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother John Barton, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-490-3000 Email: en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000239842400088
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress en
dc.identifier.articleid 73506

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