Thermionic emission perpendicular to bulk and multiquantum AlxGa1-xInP barriers

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dc.contributor.author Ní Chróinín, J. N.
dc.contributor.author Morrison, Alan P.
dc.date.accessioned 2017-07-28T13:20:07Z
dc.date.available 2017-07-28T13:20:07Z
dc.date.issued 2006
dc.identifier.citation Chróinín, J. N. and Morrison, A. P. (2006) 'Thermionic emission perpendicular to bulk and multiquantum AlxGa1−xInP barriers', Applied Physics Letters, 88(14), pp. 142110. doi: 10.1063/1.2181648 en
dc.identifier.volume 88
dc.identifier.issued 14
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4389
dc.identifier.doi 10.1063/1.2181648
dc.description.abstract A study on thermally activated currents across the bulk and multiquantum barrier (MQB) AlxGa1-xInP/GaInP has been carried out and compared to experimental results from a series of n-i-n diodes over a range of temperatures. By considering the true quantum mechanical nature of the barriers, in contrast to the classical Richardson formalism, it is found that the alloy crossover strongly affects the transport properties of the material. The measured prefactor is found to decrease as Al content is increased. When applied to the MQB structures, the existing model fails to capture the experimental results. (c) 2006 American Institute of Physics. (DOI:10.1063/1.2181648) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.2181648
dc.rights © 2006 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Chróinín, J. N. and Morrison, A. P. (2006) 'Thermionic emission perpendicular to bulk and multiquantum AlxGa1−xInP barriers', Applied Physics Letters, 88(14), pp. 142110 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2181648 en
dc.subject Laser-diodes en
dc.subject Transport en
dc.subject Algainp en
dc.subject Aluminium en
dc.subject Conduction bands en
dc.subject Effective mass en
dc.subject III-V semiconductors en
dc.subject Activation energies en
dc.title Thermionic emission perpendicular to bulk and multiquantum AlxGa1-xInP barriers en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Alan P. Morrison, Electrical and Electronic Engineering, University College Cork, Cork, Ireland. +353-21-490-3000 Email: a.morrison@ucc.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.rssid 421649678
dc.internal.wokid WOS:000236612000051
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress a.morrison@ucc.ie en
dc.identifier.articleid 142110


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