Influence of the cavity on the low-temperature photoluminescence of SiGe/Si multiquantum wells grown on a silicon-on-insulator substrate
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Date
2006
Authors
Li, C. B.
Cheng, B. W.
Zuo, Y. H.
Morrison, Alan P.
Yu, J. Z.
Wang, Q. M.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
The influences of the cavity on the low-temperature photoluminescence of Si0.59Ge0.41/Si multiquantum wells grown on silicon-on-insulator substrates are discussed. The positions of the modulated photoluminescence (PL) peaks not only relate to the nature of SiGe/Si multiquantum wells, but also relate to the characteristic of the cavity. With increasing temperature, a redshift of the modulated PL peak originating from the thermo-optical effect of the cavity is observed. (c) 2006 American Institute of Physics. (DOI:10.1063/1.2187433)
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Keywords
Si-ge alloys , Multilayer structure , Room-temperature , Quantum-wells , Band-edge , Heterostructures , Islands
Citation
Li, C. B., Cheng, B. W., Zuo, Y. H., Morrison, A. P., Yu, J. Z. and Wang, Q. M. (2006) 'Influence of the cavity on the low-temperature photoluminescence of SiGe∕Si multiquantum wells grown on a silicon-on-insulator substrate', Applied Physics Letters, 88(12), pp. 121901. doi: 10.1063/1.2187433
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Copyright
© 2006 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Li, C. B., Cheng, B. W., Zuo, Y. H., Morrison, A. P., Yu, J. Z. and Wang, Q. M. (2006) 'Influence of the cavity on the low-temperature photoluminescence of SiGe∕Si multiquantum wells grown on a silicon-on-insulator substrate', Applied Physics Letters, 88(12), pp. 121901 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2187433