Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters

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dc.contributor.author Andreev, A. D.
dc.contributor.author O'Reilly, Eoin P.
dc.date.accessioned 2017-07-28T13:20:08Z
dc.date.available 2017-07-28T13:20:08Z
dc.date.issued 2005
dc.identifier.citation Andreev, A. D. and O’Reilly, E. P. (2005) 'Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters', Applied Physics Letters, 87(21), pp. 213106. doi: 10.1063/1.2130378 en
dc.identifier.volume 87
dc.identifier.issued 21
dc.identifier.startpage 1
dc.identifier.endpage 3
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4391
dc.identifier.doi 10.1063/1.2130378
dc.description.abstract We present a theoretical analysis of the optical matrix element between the electron and hole ground states in InAs/GaAs quantum dots (QDs) modeled with a truncated pyramidal shape. We use an eight-band k center dot p Hamiltonian to calculate the QD electronic structure, including strain and piezoelectric effects. The ground state optical matrix element is very sensitive to variations in both the QD size and shape. For all shapes, the matrix element initially increases with increasing dot height, as the electron and hole wave functions become more localized in k space. Depending on the QD aspect ratio and on the degree of pyramidal truncation, the matrix element then reaches a maximum for some dot shapes at intermediate size beyond which it decreases abruptly in larger dots, where piezoelectric effects lead to a marked reduction in electron-hole overlap. (c) 2005 American Institute of Physics. (DOI:10.1063/1.2130378) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.2130378
dc.rights © 2005 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Andreev, A. D. and O’Reilly, E. P. (2005) 'Optical matrix element in InAs∕GaAs quantum dots: Dependence on quantum dot parameters', Applied Physics Letters, 87(21), pp. 213106 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2130378 en
dc.subject Electronic-structure en
dc.subject Gain en
dc.subject Lasers en
dc.subject Distributions en
dc.subject Operation en
dc.subject Quantum dots en
dc.subject Wave functions en
dc.subject Piezoelectric fields en
dc.subject III-V semiconductors en
dc.subject Ground states en
dc.title Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Eoin O'Reilly, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 234 6413, Email: eoin.oreilly@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000233362300073
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress eoin.oreilly@tyndall.ie en
dc.identifier.articleid 213106


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