Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes

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dc.contributor.author Kelleher, Carmel
dc.contributor.author Ginige, Ravin
dc.contributor.author Corbett, Brian M.
dc.contributor.author Clarke, Gerard
dc.date.accessioned 2017-07-28T13:29:54Z
dc.date.available 2017-07-28T13:29:54Z
dc.date.issued 2004
dc.identifier.citation Kelleher, C., Ginige, R., Corbett, B. and Clarke, G. (2004) 'Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes', Applied Physics Letters, 85(24), pp. 6033-6035. doi: 10.1063/1.1835537 en
dc.identifier.volume 85
dc.identifier.issued 24
dc.identifier.startpage 6033
dc.identifier.endpage 6035
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4396
dc.identifier.doi 10.1063/1.1835537
dc.description.abstract We compare the electrical and optical characteristics of mesa diodes based on In0.62Ga0.38As/In0.45Ga0.55As strain-balanced multiple-quantum wells (SB-MQW) with lattice-matched (LM) In0.53Ga0.47As diodes. The dark current density of the SB-MQW devices is at least an order of magnitude lower than the LM devices for voltages >0.4 V. Sidewall recombination current is only measured on SB-MQW diodes when exposed to a damaging plasma. While radiative recombination current dominates in the SB-MQW diodes, it is less than the diffusive current in the LM diodes for the same applied voltage. (C) 2004 American Institute of Physics. (DOI:10.1063/1.1835537) en
dc.description.sponsorship European Commission (Project No. NNE5-1999-00573); Higher Education Authority (PRTLI fund) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.1835537
dc.rights © 2004 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Kelleher, C., Ginige, R., Corbett, B. and Clarke, G. (2004) 'Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes', Applied Physics Letters, 85(24), pp. 6033-6035 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1835537 en
dc.subject Thermophotovoltaic applications en
dc.subject Solar-cells en
dc.subject Recombination en
dc.subject Multiple quantum wells en
dc.subject Dark currents en
dc.subject Electric currents en
dc.subject Carrier density en
dc.subject Electric measurements en
dc.title Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Brian Corbett, Tyndall National Institute, University College Cork, Cork, Ireland +353 214904380, Email: brian.corbett@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000225620200073
dc.contributor.funder Higher Education Authority
dc.contributor.funder Fifth Framework Programme
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress brian.corbett@tyndall.ie en


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