Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states

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dc.contributor.author Uskov, Alexander V.
dc.contributor.author O'Reilly, Eoin P.
dc.contributor.author McPeake, Dermot
dc.contributor.author Ledentsov, Nikolai N.
dc.contributor.author Bimberg, D.
dc.contributor.author Huyet, Guillaume
dc.date.accessioned 2017-07-28T13:29:54Z
dc.date.available 2017-07-28T13:29:54Z
dc.date.issued 2004
dc.identifier.citation Uskov, A. V., O’Reilly, E. P., McPeake, D., Ledentsov, N. N., Bimberg, D. and Huyet, G. (2004) 'Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states', Applied Physics Letters, 84(2), pp. 272-274. doi: 10.1063/1.1639933 en
dc.identifier.volume 84
dc.identifier.issued 2
dc.identifier.startpage 272
dc.identifier.endpage 274
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4401
dc.identifier.doi 10.1063/1.1639933
dc.description.abstract The carrier-induced refractive index in quantum dot (QD) structures due to optical transitions from QD levels to continuum states is considered. It is shown that, for large photon energies, the refractive index change is given asymptotically by the Drude formula. Calculations of the linewidth enhancement factor, alpha, show that alphasimilar to1 due to this contribution to the total refractive index. Furthermore, for highly localized QD states, the absorption coefficient at the photon energies similar to0.8-1.0 eV due to these transitions can be on the order of 10(3) m(-1). (C) 2004 American Institute of Physics. (DOI: 10.1063/1.1639933) en
dc.description.sponsorship Science Foundation Ireland; Russian Foundation for Basic Research (RFBR No. 01-02-17330);The International Association for the Promotion of Cooperation with Scientists from the Independent States of the Former Soviet Union (INTAS No. 2001-0571); Ministry of Education and Science of the Russian Federation (Russian Federal Program (No. A0155)); European Commission (EU IST project (DOTCOM)); Higher Education Authority (PRTLI Program) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.1639933
dc.rights © 2004 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Uskov, A. V., O’Reilly, E. P., McPeake, D., Ledentsov, N. N., Bimberg, D. and Huyet, G. (2004) 'Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states', Applied Physics Letters, 84(2), pp. 272-274 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1639933 en
dc.subject Linewidth enhancement factor en
dc.subject Semiconductor-laser en
dc.subject Filamentation en
dc.subject Dependence en
dc.subject Gain en
dc.subject Quantum dots en
dc.subject Refractive index en
dc.subject Photons en
dc.subject Absorption coefficient en
dc.subject Linewidths en
dc.title Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Eoin O'Reilly, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: eoin.oreilly@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000187916300038
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder Russian Foundation for Basic Research
dc.contributor.funder International Association for the Promotion of Cooperation with Scientists from the Independent States of the Former Soviet Union (INTAS)
dc.contributor.funder Fifth Framework Programme
dc.contributor.funder Higher Education Authority
dc.contributor.funder Ministry of Education and Science of the Russian Federation
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress eoin.oreilly@tyndall.ie en


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