Intrinsic limits on electron mobility in dilute nitride semiconductors

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dc.contributor.author Fahy, Stephen B.
dc.contributor.author O'Reilly, Eoin P.
dc.date.accessioned 2017-07-28T13:29:54Z
dc.date.available 2017-07-28T13:29:54Z
dc.date.issued 2003
dc.identifier.citation Fahy, S. and O’Reilly, E. P. (2003) 'Intrinsic limits on electron mobility in dilute nitride semiconductors', Applied Physics Letters, 83(18), pp. 3731-3733. doi: 10.1063/1.1622444 en
dc.identifier.volume 83
dc.identifier.issued 18
dc.identifier.startpage 3731
dc.identifier.endpage 3733
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4402
dc.identifier.doi 10.1063/1.1622444
dc.description.abstract A fundamental connection is established between the composition-dependence of the conduction band edge energy and the n-type carrier scattering cross section in the ultradilute limit for semiconductor alloys, imposing general limits on the carrier mobility in such alloys. From the measured nitrogen composition dependence of the bandgap in GaAs1-xNx, the carrier scattering cross section of substitutional nitrogen defects in GaAs is estimated to be 0.3 nm(2). Within an independent scattering approximation, the carrier mobility is then estimated to be similar to1000 cm(2)/V s for a nitrogen atomic concentration of 1%, comparable to the highest measured mobility in high-quality GaInNAs samples at these N concentrations, but substantially higher than that found in many samples. This gives an intrinsic upper bound on the carrier mobility in these materials. (C) 2003 American Institute of Physics. (DOI: 10.1063/1.1622444) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.1622444
dc.rights © 2003 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Fahy, S. and O’Reilly, E. P. (2003) 'Intrinsic limits on electron mobility in dilute nitride semiconductors', Applied Physics Letters, 83(18), pp. 3731-3733 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1622444 en
dc.subject Gainnas alloys en
dc.subject Scattering en
dc.subject Nitrogen en
dc.subject Ingaasn en
dc.subject Carrier mobility en
dc.subject Carrier scattering en
dc.subject Scattering measurements en
dc.subject III-V semiconductors en
dc.subject Semiconductors en
dc.title Intrinsic limits on electron mobility in dilute nitride semiconductors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Eoin O'Reilly, Tyndall National Institute, University College Cork, Cork, Ireland +353 21 490 3000, Email: eoin.oreilly@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.wokid WOS:000186256300029
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress eoin.oreilly@tyndall.ie en


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