Silicon-based resonant-cavity-enchanced photodiode with a buried SiO2 reflector

Show simple item record

dc.contributor.author Sinnis, Vasileios S.
dc.contributor.author Seto, M.
dc.contributor.author 't Hooft, G. W.
dc.contributor.author Watabe, Y.
dc.contributor.author Morrison, Alan P.
dc.contributor.author Hoekstra, W.
dc.contributor.author de Boer, W. B.
dc.date.accessioned 2017-07-28T13:29:55Z
dc.date.available 2017-07-28T13:29:55Z
dc.date.issued 1999
dc.identifier.citation Sinnis, V. S., Seto, M., Hooft, G. W. t., Watabe, Y., Morrison, A. P., Hoekstra, W. and Boer, W. B. d. (1999) 'Silicon-based resonant-cavity-enchanced photodiode with a buried SiO2 reflector', Applied Physics Letters, 74(9), pp. 1203-1205. doi: 10.1063/1.123499 en
dc.identifier.volume 74
dc.identifier.issued 9
dc.identifier.startpage 1203
dc.identifier.endpage 1205
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/4410
dc.identifier.doi 10.1063/1.123499
dc.description.abstract We report on a silicon-based resonant cavity photodiode with a buried silicon dioxide layer as the bottom reflector. The buried oxide is created by using a separation by implantation of oxygen technique. The device shows large Fabry-Perot oscillations. Resonant peaks and antiresonant troughs are observed as a function of the wavelength, with a peak responsivity of about 50 mA/W at 650 and 709 nm. The leakage current density is 85 pA/mm(2) at -5 V, and the average zero-bias capacitance is 12 pF/mm(2). We also demonstrate that the buried oxide prevents carriers generated deep within the substrate from reaching the top contacts, thus removing any slow carrier diffusion tail from the impulse response. (C) 1999 American Institute of Physics. (DOI: 10.1063/1.123499). en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://aip.scitation.org/doi/abs/10.1063/1.123499
dc.rights © 1999 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Sinnis, V. S., Seto, M., Hooft, G. W. t., Watabe, Y., Morrison, A. P., Hoekstra, W. and Boer, W. B. d. (1999) 'Silicon-based resonant-cavity-enchanced photodiode with a buried SiO2 reflector', Applied Physics Letters, 74(9), pp. 1203-1205 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.123499 en
dc.subject High-speed en
dc.subject Wavelength en
dc.subject Photodiodes en
dc.subject Silicon en
dc.subject Physics demonstrations en
dc.subject Diffusion en
dc.subject Leakage currents en
dc.title Silicon-based resonant-cavity-enchanced photodiode with a buried SiO2 reflector en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Alan P. Morrison, Electrical & Electronic Engineering, University College Cork, Cork, Ireland. +353-21-490-3000 Email: a.morrison@ucc.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.rssid 421663375
dc.internal.wokid WOS:000079010000005
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.IRISemailaddress a.morrison@ucc.ie en


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement