Stabilization of self-focusing instability in wide-aperture semiconductor lasers

Voignier, Vincent; Houlihan, John; O'Callaghan, J. R.; Sailliot, C; Huyet, Guillaume

Stabilization of self-focusing instability in wide-aperture semiconductor lasers

Files

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Published Version

Date

2002

Authors

Voignier, Vincent

Houlihan, John

O'Callaghan, J. R.

Sailliot, C

Huyet, Guillaume

Publisher

American Physical Society

Published Version

10.1103/PhysRevA.65.053807

Abstract

A mechanism for the stabilization of the output of filamentary broad-area edge-emitting semiconductor lasers is analyzed experimentally and theoretically. This mechanism occurs when the carrier density is profiled in the transverse direction. The laser structure consisted of a wide-aperture edge-emitting laser diode operating in pulsed mode to avoid thermal guiding effects. The injection current profile was modified from the usual step-function case to a Lorentzian-like profile through the inclusion of a 10 mum p-type epitaxial spreading layer. The resulting nonlinear transverse mode is described and the possibility of its observation in two transverse dimensions is discussed.

Keywords

Linewidth enhancement factor , Large fresnel number , Broad-area lasers , Pattern-formation , Spatiotemporal dynamics , Transverse section , Nonlinear optics , Lateral-modes , Gain , Waves

Citation

Voignier, V., Houlihan, J., O’Callaghan, J. R., Sailliot, C. and Huyet, G. (2002) 'Stabilization of self-focusing instability in wide-aperture semiconductor lasers', Physical Review A, 65(5), 053807 (5pp). doi: 10.1103/PhysRevA.65.053807