Self-limiting evolution of seeded quantum wires and dots on patterned substrates

Dimastrodonato, Valeria; Pelucchi, Emanuele; Vvedensky, D. D.

Self-limiting evolution of seeded quantum wires and dots on patterned substrates

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Supplementary file 1

SupplementalMaterial.tex(945 B)

Supplementary file 2

FigSM (1).eps(176.96 KB)

Supplementary file 3

Date

2012

Authors

Dimastrodonato, Valeria

Pelucchi, Emanuele

Vvedensky, D. D.

Publisher

American Physical Society

Published Version

10.1103/PhysRevLett.108.256102

Abstract

Extensive experimental data and an accompanying theoretical model are presented for the self-limiting profiles and Ga segregation on patterned GaAs(111)B substrates during metalorganic vapor-phase epitaxy of A1(x)Ga1-As-x. Self-limiting widths and segregation of Ga produce quantum dots along the base of pyramidal recesses bounded by (111)A planes and quantum wires along the vertical axis of the template, respectively. Coupled reaction-diffusion equations for precursor and adatom kinetics reproduce the measured concentration and temperature dependence of the self-limiting width and segregation. Our model can be extended to other patterned systems, providing a new paradigm for predicting the morphology of surface nanostructures and inferring their quantum optical properties.

Keywords

Molecular beam epitaxy , Growth , GaAs , Heterostructures , Emission , Surface

Citation

Dimastrodonato, V., Pelucchi, E. and Vvedensky, D. D. (2012) 'Self-limiting evolution of seeded quantum wires and dots on patterned substrates', Physical Review Letters, 108(25), 256102 (5pp). doi: 10.1103/PhysRevLett.108.256102